UNR1110 PANASONIC [Panasonic Semiconductor], UNR1110 Datasheet - Page 4

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UNR1110

Manufacturer Part Number
UNR1110
Description
Silicon PNP epitaxial planer transistor
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
UNR111x Series
4
Characteristics charts of UNR1111
Characteristics charts of UNR1112
−160
−120
−160
−120
−80
−40
−80
−40
− 0.1
6
5
4
3
2
1
0
0
0
0
0
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
−2
−2
C
−1
−4
−4
I
I
I
I
B
C
C
B
ob
= −1.0 mA
= −1.0 mA
 V
 V
 V
−6
−6
CE
CE
− 0.9 mA
CB
−10
− 0.8 mA
−8
−8
− 0.9 mA
f = 1 MHz
I
T
T
T
E
a
CB
a
a
= 0
− 0.7 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
= 25°C
− 0.5 mA
− 0.4 mA
= 25°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
= 25°C
−10
−10
CE
CE
(V)
( V )
( V )
−100
−12
−12
− 0.01
− 0.01
−100
−100
− 0.1
−10
−10
−10
− 0.1
−10
−10
−10
−1
−1
−1
− 0.4
− 0.1
− 0.1
4
3
2
Collector current I
Collector current I
−25°C
− 0.6
−25°C
SJH00001BED
Input voltage V
V
V
−1
−1
I
CE(sat)
25°C
CE(sat)
− 0.8
O
 V
25°C
 I
 I
−1.0
IN
−10
−10
IN
C
C
C
C
T
I
( V )
I
T
( mA )
V
T
( mA )
C
C
a
−1.2
a
a
O
/ I
= 75°C
/ I
= 75°C
= 25°C
= −5 V
B
B
= 10
= 10
−100
−1.4
−100
− 0.01
−100
− 0.1
−10
400
300
200
100
160
120
−1
80
40
− 0.1
0
0
−1
−1
V
CE
= −10 V
Collector current I
Collector current I
Output current I
−10
−10
−1
V
h
h
FE
FE
IN
 I
 I
 I
−100
C
−100
C
O
T
−10
O
C
C
a
V
T
V
−25°C
= 75°C
( mA )
25°C
( mA )
a
( mA )
O
CE
T
= 25°C
= − 0.2 V
a
= −10 V
−25°C
= 75°C
25°C
−1 000
−1 000
−100

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