UNR2210 PANASONIC [Panasonic Semiconductor], UNR2210 Datasheet - Page 3

• Manufacturer Part Number: UNR2210
• Description: Silicon NPN epitaxial planar transistor
• Manufacturer: PANASONIC [Panasonic Semiconductor]

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Electrical Characteristics (continued) T
Resistance ratio UNR221M
Common characteristics chart
Characteristics charts of UNR2210
250
200
150
100
60
50
40
30
20
10
50
0
0
0
0
Collector-emitter voltage V
Ambient temperature T
2
I
40
B
Parameter
= 1.0 mA
0.3 mA
UNR221N
UNR2218/2219
UNR221Z
UNR2214
UNR221T
UNR221F
UNR221V
UNR2211/2212/2213/221L
UNR221K
UNR221E
UNR221D
I
4
P
C
0.9 mA
T
 V
0.8 mA
 T
80
6
0.7 mA
CE
0.6 mA
a
8
0.5 mA
120
T
0.4 mA
a
a
= 25°C
( °C )
CE
10
0.1 mA
(V)
160
12
Symbol
R
1
/R
0.01
100
2
0.1
10
1
0.1
−25°C
Collector current I
a
SJH00010CED
= 25°C ± 3°C
V
1
CE(sat)
25°C
Conditions
 I
10
C
T
C
a
I
(mA)
C
= 75°C
/ I
B
= 10
100
400
300
200
100
0
0.08
0.17
0.37
1.70
1.70
Min
0.8
3.7
1
Collector current I
UNR221x Series
0.047
0.10
0.21
0.21
0.47
0.47
2.13
2.14
Typ
0.1
1.0
1.0
4.7
10
h
FE
 I
Max
0.12
0.25
0.57
2.60
2.60
1.2
5.7
T
C
a
100
= 75°C
C
−25°C
V
25°C
( mA )
CE
= 10 V
Unit

1 000
3