UNR221E PANASONIC [Panasonic Semiconductor], UNR221E Datasheet
UNR221E
Manufacturer Part Number
UNR221E
Description
Silicon NPN epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.UNR221E.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UNR221E-(TX)
Manufacturer:
PANASONIC
Quantity:
3 656
Company:
Part Number:
UNR221E00L
Manufacturer:
PANASONIC
Quantity:
60 000
Composite Transistors
XN0121E
Silicon NPN epitaxial planar type
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR221E (UN221E) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
(Emitter-coupled transistors with built-in resistor)
FE
Ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XN121E)
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
R
P
I
T
V
V
FE(Small
CBO
CEO
/Large)
a
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
/ R
OL
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
100
300
150
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CE
CC
CC
CB
50
50
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00024BED
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 6 V, R
= 0
= 0
= 5 mA
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
= 1 kΩ
L
= 1 kΩ
Marking Symbol: AQ
Internal Connection
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
10˚
3
2
(0.95) (0.95)
0.30
2.90
1.9
4
−30%
+0.10
–0.05
0.50
±0.1
Min
+0.20
–0.05
4.9
Tr2
50
50
60
3
2
5
1
0.99
2.14
Typ
150
47
4
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Tr1
+30%
5
1
Max
0.25
0.1
0.5
0.2
0.2
0.16
+0.10
–0.06
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UNR221E Summary of contents
Page 1
... Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR221E (UN221E) × 2 ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
XN0121E 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a 160 = 75° 120 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...