UNR2222 PANASONIC [Panasonic Semiconductor], UNR2222 Datasheet

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UNR2222

Manufacturer Part Number
UNR2222
Description
Silicon NPN epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.UNR2222.pdf (6 pages)
Transistors with built-in Resistor
UNR222x Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
• UNR2221 (UN2221)
• UNR2222 (UN2222)
• UNR2223 (UN2223)
• UNR2224 (UN2224)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR2222
(Collector open) UNR2223/2224
Forward current UNR2221
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
reduction of the number of parts.
packing and magazine packing
Parameter
Parameter
UNR2221
UNR2222
UNR2223/2224
Marking Symbol (R
9A
9B
9C
9D
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
2.2 kΩ
4.7 kΩ
2.2 kΩ
P
10 kΩ
I
T
V
CBO
CEO
V
a
I
I
I
V
V
C
stg
CE(sat)
T
h
CBO
CEO
EBO
j
CBO
CEO
= 25°C
FE
OH
OL
1
)
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
C
C
C
500
200
150
Note) The part numbers in the parenthesis show conventional part number.
CB
CE
EB
CE
CC
CC
50
50
(UN222x Series)
= 10 µA, I
= 2 mA, I
= 10 mA, I
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
SJH00012CED
(R
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
2
)
B
C
E
Conditions
B
B
Unit
mW
B
E
B
C
mA
= 0
= 0
°C
°C
V
V
= 0
= 5 mA
= 0.5 V, R
= 3.5 V, R
= 0
= 0
= 100 mA
L
L
= 500 Ω
= 500 Ω
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
B
Min
0.40
4.9
3
50
50
40
50
60
2
+0.10
–0.05
R
R
1
2
Typ
Mini3-G1 Package
Max
0.25
0.2
1
1
5
2
1
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
Unit
mA
µA
µA
V
V
V
V
V
1

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UNR2222 Summary of contents

Page 1

... Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ Resistance by Part Number Marking Symbol (R • UNR2221 (UN2221) 9A • UNR2222 (UN2222) 9B • UNR2223 (UN2223) 9C • UNR2224 (UN2224) 9D ■ Absolute Maximum Ratings T Parameter ...

Page 2

... UNR222x Series ■ Electrical Characteristics (continued) T Parameter Transition frequency Input resistance UNR2221/2224 UNR2222 UNR2223 Resistance ratio UNR2224 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  250 200 150 100 ...

Page 3

... MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR2222  300 = 25° 250 = 1 0.9 mA 200 0.8 mA 0.7 mA 150 0.6 mA 0.5 mA 100 0 0 Collector-emitter voltage V ...

Page 4

UNR222x Series Characteristics charts of UNR2223  240 = 25° 200 = 1 160 0.9 mA 0.8 mA 120 0.7 mA 0 0 ...

Page 5

MHz = 25° 0 100 Collector-base voltage V (V) CB  ...

Page 6

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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