UNR911BJ PANASONIC [Panasonic Semiconductor], UNR911BJ Datasheet - Page 13

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UNR911BJ

Manufacturer Part Number
UNR911BJ
Description
Silicon PNP epitaxial planer transistor
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
–240
–200
–160
–120
–120
–100
–80
–40
–80
–60
–40
–20
6
5
4
3
2
1
0
0
0
–1
0
0
Characteristics charts of UN911H
Collector to base voltage V
Characteristics charts of UN911L
Collector to emitter voltage V
Collector to emitter voltage V
–2
–2
–3
–4
–4
C
I
I
C
ob
C
— V
— V
— V
–10
–6
–6
CE
CE
CB
–8
–8
–30
I
I
B
B
=–0.5mA
=–1.0mA
f=1MHz
I
Ta=25˚C
Ta=25˚C
Ta=25˚C
E
CE
CE
–10
–10
–0.8mA
–0.6mA
–0.4mA
–0.2mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
CB
=0
( V )
( V )
( V )
–100
–12
–12
–0.01
–0.03
–0.01
–0.01
–100
–100
–100
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
–0.1
–0.3
–0.1
–0.1
–30
–10
–10
–10
–3
–1
–1
–1
–0.1 –0.3
–1
–1
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Collector current I
Collector current I
–3
Output current I
–3
V
V
–10
25˚C
–10
V
–1
CE(sat)
CE(sat)
–25˚C
25˚C
IN
Ta=75˚C
Ta=75˚C
–30
–30
— I
–3
— I
— I
–25˚C
O
–100 –300 –1000
–100 –300 –1000
–10
O
C
C
C
C
V
Ta=25˚C
( mA )
O
( mA )
( mA )
=–0.2V
I
I
–30
C
C
/I
/I
B
B
=10
=10
–100
240
200
160
120
240
200
160
120
80
40
80
40
–0.1 –0.3
0
0
–1
Collector current I
Collector current I
–3
25˚C
Ta=75˚C
–10
h
–1
h
FE
FE
–25˚C
— I
— I
–30
–3
25˚C
Ta=75˚C
C
C
–100 –300 –1000
–10
C
C
V
–25˚C
V
CE
CE
( mA )
( mA )
–30
=–10V
= –10V
–100
13

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