N02L1618C1AB NANOAMP [NanoAmp Solutions, Inc.], N02L1618C1AB Datasheet - Page 6

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N02L1618C1AB

Manufacturer Part Number
N02L1618C1AB
Description
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
Manufacturer
NANOAMP [NanoAmp Solutions, Inc.]
Datasheet
NanoAmp Solutions, Inc.
Stock No. 23265-A
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Timing Test Conditions
Timing
Byte Select Disable to High-Z Output
Output Hold from Address Change
Output Disable to High-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Enable to Valid Output
Address Valid to End of Write
Chip Enable to Low-Z output
Byte Select to Low-Z Output
Chip Enable to Valid Output
Chip Enable to End of Write
Data to Write Time Overlap
Byte Select to Valid Output
Byte Select to End of Write
Data Hold from Write Time
End Write to Low-Z Output
Write to High-Z Output
Address Access Time
Write Recovery Time
Address Setup Time
Write Pulse Width
Input and Output Timing Reference Levels
Read Cycle Time
Write Cycle Time
Item
Input Rise and Fall Time
Operating Temperature
Power Supply Voltage
Input Pulse Level
Output Load
Item
t
LBHZ
t
t
LBW
Symbol
LBZ
t
LB
t
t
t
t
t
t
t
WHZ
t
t
t
t
t
OHZ
t
t
t
t
OLZ
t
t
t
WC
CW
WP
WR
DW
OW
RC
CO
OE
OH
AW
DH
AA
HZ
, t
AS
, t
LZ
, t
, t
UB
UBZ
UBHZ
UBW
Min.
85
10
10
85
50
50
50
50
40
10
5
5
0
0
0
85ns
Max.
85
85
30
85
30
30
30
25
0.1V
-40 to +85
Min.
1.65 - 2.2V
70
10
10
70
40
40
40
40
40
10
CL = 30pF
5
5
0
0
0
CC
0.5 V
Advance Information
5ns
to 0.9 V
70ns
CC
o
Max.
C
70
70
25
70
25
25
25
20
CC
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6

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