RBV1000D_05 EIC [EIC discrete Semiconductors], RBV1000D_05 Datasheet - Page 2

• Manufacturer Part Number: RBV1000D_05
• Description: SILICON BRIDGE RECTIFIERS
• Manufacturer: EIC [EIC discrete Semiconductors]

Page 2 of 2
0.01
FIG.1 - DERATING CURVE FOR OUTPUT
10
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
1.0
0.1
12
10
8
6
4
2
0
0.4
0
HEAT-SINK MOUNTING, Tc
(8.2cm x 8.2cm x 0.3cm) Al.-
RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D )
RECTIFIED CURRENT
PER DIODE
0.6
3.2" x 3.2" x 0.12" THK.
25
FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE, (
FINNED PLATE
0.8
50
1.0
75
1.2
100
Pulse Width = 300 μs
1 % Duty Cycle
T
J
1.4
125
= 25 °C
°
C)
150
1.6
1.8
175
0.01
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
300
250
200
150
100
1.0
10
0.1
50
0
0
1
8.3 ms SINGLE HALF SINE WAVE
NUMBER OF CYCLES AT 60Hz
FORWARD SURGE CURRENT
PER DIODE
20
2
REVERSE VOLTAGE, (%)
PERCENT OF RATED
Certificate TH97/10561QM
JEDEC METHOD
40
4
6
60
T
10
J
T
= 100 °C
80
J
T
Rev. 04 : Decsember 12, 2005
= 25 °C
J
= 50 °C
20
10
40
12
60
140
100
Certificate TW00/17276EM