RBV2500D_05 EIC [EIC discrete Semiconductors], RBV2500D_05 Datasheet - Page 2

• Manufacturer Part Number: RBV2500D_05
• Description: SILICON BRIDGE RECTIFIERS
• Manufacturer: EIC [EIC discrete Semiconductors]

Page 2 of 2
0.1
0.01
100
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1.0
10
30
20
15
10
25
5
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D )
HEAT-SINK MOUNTING, Tc
(12.8cm x 15.2cm x 12.4cm)
PER DIODE
RECTIFIED CURRENT
0.6
25
FORWARD VOLTAGE, VOLTS
5" x 6" x 4.9" THK.
CASE TEMPERATURE, ( C)
Al.-Finned plate
0.8
50
1.0
75
1.2
100
Pulse Width = 300 s
1 % Duty Cycle
T
J
= 25 C
125
1.4
150
1.6
1.8
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
200
0.0
300
250
150
100
1.0
10
0.1
50
0
1
0
8.3 ms SINGLE HALF SINE WAVE
PER DIODE
FORWARD SURGE CURRENT
20
NUMBER OF CYCLES AT 60Hz
2
REVERSE VOLTAGE, (%)
PERCENT OF RATED
JEDEC METHOD
40
4
6
60
10
T
T
Rev. 03 : September 9, 2005
J
80
J
T
= 100 C
= 25 C
J
20
= 50 C
100
40
12
0
60
100
140