RBV3510 EIC [EIC discrete Semiconductors], RBV3510 Datasheet - Page 2

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RBV3510

Manufacturer Part Number
RBV3510
Description
SILICON BRIDGE RECTIFIERS
Manufacturer
EIC [EIC discrete Semiconductors]
Datasheet
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
0.1
0.01
60
50
40
30
20
10
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 )
P.C. Board Mounted with
SINE WAVE R-Load
RECTIFIED CURRENT
PER DIODE
0.6
25
FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE, ( C)
0.8
50
1.0
75
Pulse Width = 300 s
1 % Duty Cycle
1.2
100
T
J
= 25 C
125
1.4
150
1.6
1.8
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0.01
600
500
400
200
1.0
300
100
10
0.1
0
1
0
8.3 ms SINGLE HALF SINE WAVE
FORWARD SURGE CURRENT
PERCENT OF RATED REVERSE
PER DIODE
NUMBER OF CYCLES AT 60Hz
20
2
JEDEC METHOD
40
4
VOLTAGE, (%)
6
60
T
10
J
T
= 100 C
J
80
T
= 25 C
J
20
= 50 C
100
40
120
60
140
100

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