RBV5000_05 EIC [EIC discrete Semiconductors], RBV5000_05 Datasheet - Page 2
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RBV5000_05
Manufacturer Part Number
RBV5000_05
Description
SILICON BRIDGE RECTIFIERS
Manufacturer
EIC [EIC discrete Semiconductors]
Datasheet
1.RBV5000_05.pdf
(2 pages)
Page 2 of 2
0.01
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
0.1
60
40
30
20
10
50
0
0.4
0
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )
P.C. Board Mounted with
SINE WAVE R-Load
RECTIFIED CURRENT
PER DIODE
0.6
25
FORWARD VOLTAGE, VOLTS
CASE TEMPERATURE, ( C)
0.8
50
1.0
75
Pulse Width = 300 s
1 % Duty Cycle
1.2
100
T
J
= 25 C
125
1.4
150
1.6
1.8
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0.01
600
500
400
300
200
100
1.0
0.1
10
0
1
0
FORWARD SURGE CURRENT
8.3 ms SINGLE HALF SINE WAVE
PERCENT OF RATED REVERSE
PER DIODE
20
NUMBER OF CYCLES AT 60Hz
2
JEDEC METHOD
40
4
VOLTAGE, (%)
6
60
10
T
J
T
80
= 100 C
J
Rev. 03 : September 9, 2005
T
= 25 C
J
20
= 50 C
100
40
12
0
60
140
10