REF193 AD [Analog Devices], REF193 Datasheet - Page 14

• Manufacturer Part Number: REF193
• Description: Precision Micropower, Low Dropout Voltage References
• Manufacturer: AD [Analog Devices]

REF19x Series
WAFER TEST LIMITS
Parameter
INITIAL ACCURACY
LINE REGULATION
LOAD REGULATION
DROPOUT VOLTAGE
SLEEP MODE INPUT
SUPPLY CURRENT
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18 V
Output to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
Output to GND Short-Circuit Duration . . . . . . . . . Indefinite
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
Package Type
8-Lead PDIP (P)
8-Lead SOIC (S)
8-Lead TSSOP (RU)
NOTES
1
2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
REF19x features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
For proper operation, a 1 µF capacitor is required between the output pins and the GND pin of the REF19x. Electrical tests and wafer probe to the limits shown.
Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications
based on dice lot qualifications through sample lot assembly and testing.
Absolute maximum rating applies to both DICE and packaged parts, unless
otherwise noted.
θ
PDIP, and θ
JA
REF191
REF192
REF193
REF194
REF195
REF196
REF198
Logic Input High
Logic Input Low
Sleep Mode
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
REF19x . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
is specified for worst case conditions, i.e., θ
JA
is specified for device soldered in circuit board for SOIC package.
103
158
240
JA
(@ I
Symbol
V
V
V
V
V
2
O
V
V
O
IN
IH
IL
O
O
LOAD
– V+
= 15 V
JA
/ V
/ I
1
is specified for device in socket for
= 0 mA, T
LOAD
IN
43
43
43
JC
A
= 25 C, unless otherwise noted.)
Condition
(V
0 mA < I
I
I
No Load
No Load
LOAD
LOAD
O
S
+ 0.5 V) < V
+ 0.3 V
Unit
°C/W
°C/W
°C/W
= 10 mA
= 30 mA
LOAD
–14–
< 30 mA, V
IN
< 15 V, I
REF19x Die Size 0.041”
Substrate Is Connected to V+, Number of Transistors:
Bipolar 25, MOSFET4. Process: CBCMOS1
OUTPUT
6
IN
OUT
= (V
V
2
= 0 mA
O
DICE CHARACTERISTICS
+ 1.3 V)
SLEEP
OUTPUT
3
6
0.057”, 2,337 Square Mils
Limit
2.043/2.053
2.495/2.505
2.990/3.010
4.495/4.505
4.995/5.005
3.290/3.310
4.091/4.101
2.4
0.8
45
15
15
15
1.25
1.55
GND
4
Unit
V
V
V
V
V
V
V
ppm/V
ppm/mA
V
V
V
V
µA
µA
REV. E