S1T8528X0 SAMSUNG [Samsung semiconductor], S1T8528X0 Datasheet - Page 24

• Manufacturer Part Number: S1T8528X0
• Description: ENHANCED-1 CHIP CT0 RF IC
• Manufacturer: SAMSUNG [Samsung semiconductor]

S1T8528
24
1uF
10uF
10nF
1§Ú
~
~
~
Vin48
Vin40
Vin43
+
+
100nF
68pF
68pF
82§Ú
4.3§Ú
100§Ú
100§Ú
10nF
VCOR
33pF
0.41uH
0.47uH
T1(AW)
47pF
56§Ú
18pF
1§Ú
10nF
10nF
47pF
47pF
0.47uH
KDS2236
S40
10uF
10uF
56§Ú
Varicap
2Lo
S48
S45
+
1nF
1uF
+
+
S41
VCOT
6.8§Ú
25pF
2.7§Ú
10nF
TIF
PDR
VREFRF
VREFPLL
0.47uF
20pF
+
S1
10nF
5.1§Ú
47pF
100§Ú
37
38
39
40
41
42
43
44
45
46
47
48
PDT
2LOI
1MO
1LOI
1LOI
VCO(RX)
1MI
1MI
GND(PLL)
PDR
VREF(RF)
VREF(PLL)
TIF
10uF
10.240MHz
2.2uF
2LOI
PDT
Vc
100§Ú
36
1
+
10.7MHz
+
10§Ú
2MO
1nF
CO
35
2
2MI
SFI
Vinc1
+
34
3
15§Ú
10nF
15§Ú
1uF
Vccrx
S34
1Mo
455KHz
(RX)
VCC
SFO
33
4
TEST CIRCUIT
1§Ú
1nF
2Mo
CDO
LDT CLKO
LD
32
LI
5
S1T8528
KB8528
S5
CDo
CLKO
31
LD
6
0.1uF
S7
(RX)
GND
CLK
CLK
30
7
680uH
S8
180pF
10K
DATA
QCI
DATA EN
SFout
29
8
RAo
10§Ú
S9
10K
RAO
68§Ú
EN
28
9
0.01uF 0.01uF
10§Ú
0.01uF
V28
10K
DSCI
LBD
LBD
27
10
Vin27
AGIC
DSCO
+
26
11
1§Ú
180§Ú
VREF(COMP)
2.2uF
GND(COMP)
DSCI
VCC(COMP)
RSSI
CRC
+
25
12
SAO2
SAO1
EPI
2.2uF
ALC
ERC
SAI
CPI
CPO
500§Ú-1000§Ú
0.1uF
EO
ENHANCED-1 CHIP CT0 RF IC
24
23
22
21
20
19
18
17
16
15
14
13
100§Ú
S25
150§Ú 100pF
15§Ú
VREFCOM
P
100§Ú
+
Voe
1uF
DSCO
30§Ú
Vin22
4.7uF
+
150§Ù
+
RSSI
2.2uF
1uF
+
10§Ú
+
1uF
Vinc
Vmico
S23
150§Ú
2.2uF
+
Vine1
SAo1
SAo2
Vcccom
+
10uF
10nF