M29W320 ST Microelectronics, M29W320 Datasheet - Page 12
![no-image](/images/no-image-200.jpg)
M29W320
Manufacturer Part Number
M29W320
Description
32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory
Manufacturer
ST Microelectronics
Datasheet
1.M29W320.pdf
(44 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W320DB-70N1
Manufacturer:
ST
Quantity:
3 000
Company:
Part Number:
M29W320DB-70N6
Manufacturer:
ST
Quantity:
240
Part Number:
M29W320DB-70N6
Manufacturer:
ST
Quantity:
20 000
M29W320DT, M29W320DB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby and Automatic Standby. See
Tables 2 and 3, Bus Operations, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Com-
mand Interface. A valid Bus Read operation in-
volves setting the desired address on the Address
Inputs, applying a Low signal, V
and Output Enable and keeping Write Enable
High, V
value, see Figure 11, Read Mode AC Waveforms,
and Table 12, Read AC Characteristics, for details
of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Ad-
dress Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Com-
mand Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output En-
able must remain High, V
Write operation. See Figures 12 and 13, Write AC
Waveforms, and Tables 13 and 14, Write AC
Characteristics, for details of the timing require-
ments.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, V
Standby. When Chip Enable is High, V
memory enters Standby mode and the Data In-
12/44
IH
IH
.
. The Data Inputs/Outputs will output the
IH
, during the whole Bus
IL
, to Chip Enable
IH
, the
puts/Outputs pins are placed in the high-imped-
ance state. To reduce the Supply Current to the
Standby Supply Current, I
be held within V
level see Table 11, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
til the operation completes.
Automatic Standby. If CMOS levels (V
are used to drive the bus and the bus is inactive for
300ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 2 and 3, Bus Operations.
Block Protect and Chip Unprotect. Each
can be separately protected against accidental
Program or Erase. The whole chip can be unpro-
tected to allow the data inside the blocks to be
changed.
Block Protect and Chip Unprotect operations are
described in Appendix C.
CC3
, for Program or Erase operations un-
ID
CC
to be applied to some pins.
± 0.2V. For the Standby current
CC2
, Chip Enable should
CC
CC2
± 0.2V)
. The
block