KM68U1000B Samsung semiconductor, KM68U1000B Datasheet - Page 5
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KM68U1000B
Manufacturer Part Number
KM68U1000B
Description
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
Manufacturer
Samsung semiconductor
Datasheet
1.KM68U1000B.pdf
(10 pages)
AC CHARACTERISTICS
DATA RETENTION CHARACTERISTICS
1. CS V
KM68V1000B, KM68U1000B Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Read
Write
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
CC
-0.2V, CS
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Item
2
V
Parameter List
CC
-0.2V(CS
( Test Load and Input/Output Reference)
C
L
L
=100pF+1TTL
=30pF+1TTL
1
controlled) or CS
V
I
t
t
DR
SDR
RDR
DR
KM68V1000B Family:Vcc=3.0~3.6V, KM68U1000B Family:Vcc=2.7~3.3V)
(Commercial product :T
KM68V1000BL/L-L
KM68V1000BLE/LE-L
KM68V1000BLI/LI-L
KM68U1000BL/L-L
KM68U1000BLE/LE-L
KM68U1000BLI/LI-L
Symbol
2
0.2V(CS
2
A
controlled)
=0 to 70 C, Extended product :T
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
OHZ
t
t
OLZ
WC
CW
WP
WR
DW
OW
RC
CO
OE
OH
AW
DH
AA
HZ
AS
LZ
CS
Vcc=3.0V
CS
CS
or CS
See data retention waveform
1
1
2
1)
Vcc-0.2V
Vcc-0.2V
2
Vcc-0.2V
0.2V
Test Condition
Min
70
10
10
70
60
60
55
30
5
0
0
0
0
0
0
5
-
-
-
Low Power
Low Low Power
Low Power
Low Low Power
Low Power
Low Low Power
Low Power
Low Low Power
1. Including scope and jig capacitance
70ns
C
L
1)
A
=-25 to 85 C, Industrial product : T
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Speed Bins
Min
100
100
Min
2.0
10
15
80
80
70
40
5
0
0
0
0
0
0
5
0
5
-
-
-
-
-
-
-
-
-
-
-
CMOS SRAM
100ns
Typ
0.5
1
-
-
-
-
-
-
-
-
-
Max
100
100
50
30
30
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.6
30
15
50
20
25
10
25
15
A
Revision 2.0
-
-
March 1998
=-40 to 85 C
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A