ILD66 SIEMENS [Siemens Semiconductor Group], ILD66 Datasheet
ILD66
Manufacturer Part Number
ILD66
Description
PHOTODARLINGTON OPTOCOUPLER
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.ILD66.pdf
(3 pages)
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FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
• Four Available CTR Categories per Package
• BV
• Standard DIP Packages
• Underwriters Lab File #E52744
•
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled isola-
tors employing Gallium Arsenide infrared emitters
and silicon photodarlington detectors. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits, with no crosstalk between channels.
Maximum Ratings
Emitter (Each Channel)
Peak Reverse Voltage........................................ 6 V
Continuous Forward Current......................... 60 mA
Power Dissipation at 25 C ......................... 100 mW
Derate Linearly from 25 C ................... 1.33 mW/ C
Detector (Each Channel)
Power Dissipation at 25 C Ambient........... 150 mW
Derate Linearly from 25 C ..................... 2.0 mW/ C
Package
Isolation Test Voltage
Total Package Power Dissipation at 25 C
Derate Linearly from 25 C
Creepage.................................................7 min mm
Clearance ................................................7 min mm
Comparative Tracking Index..............................175
Isolation Resistance
Storage Temperature ................... –55 C to +125 C
Operating Temperature................ –55 C to +100 C
Lead Soldering Time at 260 C ....................10 sec.
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66 ....................................................... 500 mW
IL66...................................................... 3.3 mW/ C
ILD66 ................................................. 5.33 mW/ C
ILQ66 ................................................. 6.67 mW/ C
IL/ILD/ILQ66 Series:
- 1, 100% min. at I
- 2, 300% min. at I
- 3, 400% min. at I
- 4, 500% min. at I
Type
(t=1 sec.)........................................5300 VAC
V
V
at 2.0 mA and 0.7 mA Input
D E
IO
IO
V
=500 V, T
=500 V, T
CEO
VDE 0884 Available with Option 1
>60 V
A
A
=25 C................................ 10
=100 C.............................. 10
F
F
F
F
=2 mA, V
=2 mA, V
=0.7 mA, V
=2 mA, V
CE
CE
CE
CE
=10 V
=10 V
=5 V
=10 V
12
11
RMS
Dimensions in inches (mm)
.255 (6.48)
.268 (6.81)
.018 (.46)
.022 (.56)
.255 (6.48)
.268 (6.81)
.018 (.46)
.022 (.56)
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
QUAD CHANNEL
(1.00)
Typ.
.039
Typ.
5–1
min.
4
4
DUAL CHANNEL
SINGLE CHANNEL
typ.
4
PHOTODARLINGTON OPTOCOUPLER
4
5
.335 (8.50)
.343 (8.70)
3
4
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
3
6
.030 (.76)
.045 (1.14)
2
5
.779 (19.77 )
.790 (20.07)
.100 (2.54) Typ.
2
.100 (2.54) Typ.
7
1
6
.020 (.051) min.
1
8
.100 (2.54) Typ.
Pin One I.D.
.030 (.76 )
.040 (1.02)
.031 (0.80)
.035 (0.90)
.130 (3.30)
.150 (3.81)
.130 (3.30)
.150 (3.81)
Pin One I.D.
Cathode
Anode
ILQ 66 SERIES
Cathode
Cathode
.030 (.76 )
.040 (1.02)
.130 (3.30)
.150 (3.81)
ILD66 SERIES
Anode
Anode
NC
Pin
One
I.D.
3 –9
1
2
3
IL66 SERIES
1
2
3
4
Cathode
Cathode
Cathode
Cathode
.300 (7.62)
.300 (7.62)
.347 (8.82)
Anode
Anode
Anode
Anode
(7.75) T yp.
.008 (.20)
.012 (.30)
3 –9
18
Typ.
.305 T yp.
.010 (.25)
.014 (.35)
Typ.
10
Typ.
1
2
3
4
5
6
7
8
(7.75) Typ.
.008 (.20)
.012 (.30)
.305 Typ.
10
Typ.
8
7
6
5
6
5
4
.110 (2.79)
.150 (3.81)
Emitter
Collector
Collector
Emitter
Base
Collector
Emitter
.115 (2.92)
.135 (3.43)
16
15
14
13
12
11
10
9
.115 (2.92)
.135 (3.43)
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
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ILD66 Summary of contents
Page 1
... V VDE 0884 Available with Option DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isola- tors employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load cir- cuits, with no crosstalk between channels. ...
Page 2
Electrical Characteristics (T =25C) A Symbol GaAs Emitter Forward Voltage Reverse Current Capacitance Photodarlington Breakdown Voltage Collector-Emitter BV CEO Collector-Base (IL66) BV CBO Leakage Current, I CEO Collector-Emitter Capacitance, Collector-Emitter Coupled Characteristics Current Transfer Ratio CTR IL/ILD/ILQ66-1 IL/ILD/ILQ66-2 IL/ILD/ILQ66-3 IL/ILD/ILQ66-4 ...
Page 3
Figure 5. Collector-base photocurrent versus LED current 1000 100 LED Current - mA Figure 6. Collector-emitter current versus LED current 10000 1000 100 10 ...