TB0720M DIODES [Diodes Incorporated], TB0720M Datasheet - Page 2

• Manufacturer Part Number: TB0720M
• Description: 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
• Manufacturer: DIODES [Diodes Incorporated]

Notes:
DS30361 Rev. 2 - 1
Electrical Characteristics
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
Part Number
1. I
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
recovery time does not exceed 30ms.
H
> (V
Repetitive
Off-State
V
L
Voltage
/R
Rated
DRM
120
140
160
190
220
275
320
L
58
65
75
90
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
(V)
Symbol
V
I
Current @
V
V
DRM
I
I
I
C
Off-State
V
I
DRM
Leakage
BO
I
BR
PP
DRM
BR
BO
H
T
O
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@ T
Breakover
Voltage
V
BO
130
160
180
220
265
300
350
400
A
77
88
98
= 25 C unless otherwise specified
(V)
I
BR
@ I
On-State
Voltage
V
I
T
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
DRM
I
I
I
BO
(V)
PP
H
= 1A
RMS
I
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
2 of 4
V
signal, V
T
(mA)
Min
Breakover
50
50
50
50
50
50
50
50
50
50
50
Current
I
R
BO
= 2V
(mA)
V
Max
800
800
800
800
800
800
800
800
800
800
800
DRM
DC
bias.
V
Holding Current
BR
(mA)
150
150
150
150
150
150
150
150
150
150
150
Min
V
BO
I
V
Max (mA)
NOTE: 1
H
NOTE: 2
Parameter
800
800
800
800
800
800
800
800
800
800
800
Capacitance
Off-State
C
O
140
140
140
90
90
90
90
60
60
60
60
(pF)
TB0640M - TB3500M
Marking Code
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M