CY7C1041B-12VXC CYPRESS [Cypress Semiconductor], CY7C1041B-12VXC Datasheet - Page 5

• Manufacturer Part Number: CY7C1041B-12VXC
• Description: 256K x 16 Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05142 Rev. *A
Data Retention Characteristics
Switching Characteristics
V
I
t
t
Notes:
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
10. t
11. No input may exceed V
Parameter
CCDR
CDR
R
power
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
Parameter
DR
[10]
r
[3]
< 3 ns for the -12 and -15 speeds. t
V
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[8, 9]
CC
(typical) to the First Access
for Data Retention
CC
+ 0.5V.
r
< 5 ns for the -20 and slower speeds.
Description
[7]
Description
[4]
[6, 7]
[7]
[6, 7]
[6, 7]
Over the Operating Range (continued)
Over the Operating Range (L version only)
Com’l
[5]
L
V
CE > V
V
IN
CC
> V
= V
CC
Conditions
CC
DR
Min.
20
20
13
13
13
13
– 0.3V,
– 0.3V or V
0
0
9
1
3
0
3
0
0
0
3
= 3.0V,
7C1041B-20
[11]
IN
Max.
20
20
20
< 0.3V
8
8
8
8
8
8
Min.
Min.
2.0
t
25
25
15
15
15
10
15
RC
0
1
5
0
5
0
0
0
0
0
5
7C1041B-25
CY7C1041B
Max.
Max.
200
10
25
25
10
10
10
25
10
10
Page 5 of 11
Unit
Unit
mA
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V