M29DW323DB70ZE1E NUMONYX [Numonyx B.V], M29DW323DB70ZE1E Datasheet - Page 29

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M29DW323DB70ZE1E

Manufacturer Part Number
M29DW323DB70ZE1E
Description
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
Figure 14. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled
Note: 1. The Toggle bit is output on DQ6.
Figure 15. Toggle and Alternative Toggle Bits Mechanism, Output Enable Controlled
Note: 1. The Toggle bit is output on DQ6.
Table 18. Toggle and Alternative Toggle Bits AC Characteristics
Note: t
A0-A20
DQ2
E
G
A0-A20
G
DQ2
E
Symbol
t
t
AXGL
AXEL
2. The Alternative Toggle bit is output on DQ2.
(1)
2. The Alternative Toggle bit is output on DQ2.
ELQV
(1)
/DQ6
/DQ6
and t
(2)
Read Operation outside the Bank
(2)
Read Operation outside the Bank
Being Programmed or Erased
GLQV
Being Programmed or Erased
Being Programmed or Erased
Being Programmed or Erased
Address Outside the Bank
Address Outside the Bank
Alt
values are presented in
Address Transition to Chip Enable Low
Address Transition to Output Enable Low
Data
Data
Table 15., Read AC
tAXGL
tAXEL
Being Programmed or Erased
Parameter
Being Programmed or Erased
Read Operation in the Bank
Read Operation in the Bank
Being Programmed or Erased
Being Programmed or Erased
tGLQV
tELQV
Alternative Toggle/
Alternative Toggle/
Address in the Bank
Address in the Bank
Characteristics.
Toggle Bit
Toggle Bit
Alternative Toggle/
tGLQV
Alternative Toggle/
M29DW323DT, M29DW323DB
tELQV
Min
Min
Toggle Bit
Toggle Bit
Read Operation Outside the Bank
Read Operation Outside the Bank
Being Programmed or Erased
Being Programmed or Erased
Address Outside the Bank
Address Outside the Bank
Being Programmed or Erased
Being Programmed or Erased
M29DW323D
10
10
Data
Data
AI08915c
AI08914c
Unit
ns
ns
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