M29DW641F70N1 NUMONYX [Numonyx B.V], M29DW641F70N1 Datasheet - Page 18
![no-image](/images/no-image-200.jpg)
M29DW641F70N1
Manufacturer Part Number
M29DW641F70N1
Description
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
1.M29DW641F70N1.pdf
(80 pages)
- Current page: 18 of 80
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Bus Operations
3.6.5
18/80
Temporary Unprotection of High voltage Protected Blocks
The RP pin can be used to temporarily unprotect all the blocks previously protected using
the In-System or the Programmer Protection technique (High voltage techniques).
Refer to
descriptions
Table 3.
1. X = V
Table 4.
1. X = V
Bus Read
Bus Write
Output Disable
Standby
Manufacturer
code
Device code
(Cycle 1)
Device code
(Cycle 2)
Device code
(Cycle 3)
Read cycle
Operation
IL
IL
Section 2.7: Reset/Block Temporary Unprotect (RP)
or V
or V
.
IH
IH
Bus Operations
Read Electronic Signature
.
V
.
E
IL
V
G
IL
V
V
V
E
X
IH
IL
IL
V
W
IH
V
V
V
G
X
A21-
IH
IH
A10
IL
X
(1)
V
V
V
W
X
V
IH
IH
A9 A8 A7-A6 A5-A4 A3 A2 A1 A0
IL
ID
X
(1)
Address Inputs
Command Address
V
Address Inputs
IL
Cell Address
A21-A0
V
X
X
X
IL
V
V
V
V
IH
IH
IL
IL
in the
V
V
V
V
IH
IH
IL
IL
V
V
V
V
Section 2: Signal
IH
IH
IL
IL
Data Inputs/Outputs
V
V
V
V
IH
IH
IL
IL
Data Output
DQ15-DQ0
Data Input
Inputs/Outputs
(M29DW641F)
Hi-Z
Hi-Z
M29DW641F
DQ15-DQ0
227Eh
0020h
2203h
2200h
Data
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