CY7C1399 CYPRESS [Cypress Semiconductor], CY7C1399 Datasheet - Page 4

• Manufacturer Part Number: CY7C1399
• Description: 32K x 8 3.3V Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Switching Characteristics
Data Retention Characteristics
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
V
I
t
t
Notes:
Parameter
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
CCDR
CDR
R
5.
6.
8.
9.
7.
DR
[4]
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
At any given temperature and voltage condition, t
t
The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
[4]
HZOE
OL
Parameter
/I
OH
, t
HZCE
and capacitance C
, t
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
HZWE
[8, 9]
are specified with C
L
Description
= 30 pF.
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
for Data Retention
[6]
[6]
L
[6, 7]
[8]
[6]
[6, 7]
Over the Operating Range
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
Description
(Over the Operating Range)
HZCE
is less than t
Min.
7C1399–12
12
12
3
0
3
0
8
8
0
0
8
7
0
3
Max. Min. Max. Min. Max.
LZCE
12
12
12
5
5
6
7
[5]
L
, t
HZOE
V
CE > V
V
V
4
7C1399–15
CC
IN
IN
15
15
10
10
10
is less than t
3
0
3
0
0
0
8
0
3
> V
< 0.3V
= V
Conditions
CC
CC
DR
HZWE
15
15
15
– 0.3V,
– 0.3V or
6
6
7
7
= 2.0V,
LZOE
and t
, and t
7C1399–20
20
20
12
12
12
10
SD
3
0
3
0
0
0
0
3
HZWE
.
is less than t
20
20
20
7
6
7
7
7C1399–25
Min. Max.
Min.
25
25
15
15
15
11
2.0
t
3
0
3
0
0
0
0
3
RC
0
LZWE
for any given device.
25
25
25
8
7
8
7
Max.
200
Min. Max.
7C1399–35
20
35
35
20
20
20
12
3
0
3
0
0
0
0
3
CY7C1399
35
35
10
35
7
8
7
Unit
ns
ns
V
A
A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns