M29W800AB STMICROELECTRONICS [STMicroelectronics], M29W800AB Datasheet - Page 10

• Manufacturer Part Number: M29W800AB
• Description: 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M29W800AT, M29W800AB
Table 9. Instructions
Note: 1. Commands not interpreted in this table will default to read array mode.
10/33
RD
ES
AS
Mne.
PG
CE
ER
BE
10. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
(2,4)
(10)
(4)
2. A wait of t
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the com-
5. Signature Address bits A0, A1, at V
6. Block Protection Address: A0, at V
7. For Coded cycles address inputs A11-A18 are don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout statuscan be
9. Read Data Polling, Toggle bits or RB until Erase completes.
operation (see Tables 15, 16 and Figure 11).
mand cycles.
code.
verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data Polli ng or Toggle bit
until Erase is completed or suspended.
Read/Reset
Memory Array
Auto Select
Program
Block Erase
Chip Erase
Erase
Suspend
Erase
Resume
Instr.
PLYH
is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting any new
Cyc.
1+
3+
3+
4
6
6
1
1
(1)
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
(3,7)
(3,7)
(3,7)
(3,7)
(3,7)
(3,7)
(3,7)
(3,7)
IL
Word
Word
Word
Word
Word
IL
Byte
Byte
Byte
Byte
Byte
, A1 at V
will output Manufacturer code (20h). Address bits A0 at V
1st Cyc.
IH
AAAh
AAAh
AAAh
AAAh
AAAh
555h
555h
555h
555h
555h
AAh
AAh
AAh
AAh
AAh
B0h
F0h
30h
X
X
X
and A15-A18 within the Block will output the Block Protection status.
Read Memory Array until a new write cycle is initiated.
Read until Toggle stops, then read all the data needed from any Block(s)
not being erased then Resume Erase.
Read Data Polling or Toggle Bits until Erase completes or Erase is
suspended another time.
2nd Cyc.
2AAh
2AAh
2AAh
2AAh
2AAh
555h
555h
555h
555h
555h
55h
55h
55h
55h
55h
3rd Cyc.
AAAh
AAAh
AAAh
AAAh
AAAh
555h
555h
555h
555h
555h
F0h
A0h
90h
80h
80h
Read Memory Array until a new write cycle is
initiated.
Read Electronic Signature or Block Protection
Status until a new write cycle is initiated. See Note
5 and 6.
4th Cyc.
Program
Program
Address
AAAh
AAAh
Data
555h
555h
AAh
AAh
Read Data Polling or Toggle Bit until
Program completes.
5th Cyc.
2AAh
2AAh
555h
555h
55h
55h
IH
and A1, at V
6th Cyc.
Address
AAAh
Block
555h
30h
10h
IL
will output Device
Additional
7th Cyc.
Block
Note 9
30h
(8)