AP4503AGM A-POWER [Advanced Power Electronics Corp.], AP4503AGM Datasheet - Page 3

• Manufacturer Part Number: AP4503AGM
• Description: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
P-CH Electrical Characteristics@T
Source-Drain Diode
Notes:
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
g
gs
gd
iss
oss
rss
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
V
V
V
V
V
V
f=1.0MHz
I
dI/dt=100A/µs
o
V
V
V
V
I
V
I
R
R
V
I
D
D
S
S
C(unless otherwise specified)
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-6A
=-1A
G
D
=-1.7A, V
=-6A,
=15Ω
=3.3Ω,V
=V
=-10V, I
=-30V, V
=-24V, V
=-24V
=-15V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-4.5V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
=-250uA
GS
=-250uA
D
GS
D
=0
D
GS
GS
=-6A
=-6A
=-4A
=0V
=-10V
V
=0V
=0V
,
Min.
Min.
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AP4503AGM
Typ.
12.4
Typ.
860
150
140
34
26
23
14
6
2
7
8
7
-
-
-
-
-
-
-
-
±100
1380
Max.
Max.
-1.2
-25
36
55
20
-3
-1
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
3