AP4800AGM_07 A-POWER [Advanced Power Electronics Corp.], AP4800AGM_07 Datasheet - Page 2

• Manufacturer Part Number: AP4800AGM_07
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
AP4800AGM
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
=70
=25
o
C)
o
C(unless otherwise specified)
2
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=2.1A, V
=9A,
=9A
=1A
=15Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=20V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=4V, I
=±20V
=4.5V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
GS
D
=250uA
=4A
D
D
=0
D
=250uA
GS
GS
GS
=9A
=9A
=0V
=7A
V
=10V
=0V
=0V
,
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
710
155
145
13
21
12
22
24
14
9
2
7
7
7
7
-
-
-
-
-
-
-
Max. Units
±100
1350
Max. Units
1.2
18
28
40
25
18
3
1
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2