AP1332EU A-POWER [Advanced Power Electronics Corp.], AP1332EU Datasheet - Page 2

• Manufacturer Part Number: AP1332EU
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: A-POWER [Advanced Power Electronics Corp.]

BV
ΔBV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t ≦ 10 sec.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP1332EU
DSS
GSS
d(on)
r
d(off)
f
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
D
D
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=600mA
=600mA
G
D
=300mA, V
=16.7Ω
=3.3Ω,V
=V
=5V, I
=20V, V
=16V ,V
=16V
=10V
=10V
=0V, I
=4.5V, I
=2.5V, I
=±6V
=4.5V
=0V
GS
Test Conditions
Test Conditions
, I
D
D
D
=600mA
=250uA
D
D
=250uA
GS
GS
GS
=600mA
=400mA
GS
=5V
=0V
=0V
=0V
D
=1mA
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
100
125
1.3
0.3
0.5
21
53
38
17
12
1
-
-
-
-
-
-
-
-
Max.
Max.
600
850
±10
1.2
1.2
10
60
1
2
-
-
-
-
-
-
-
-
-
-
-
V/℃
Unit
mΩ
mΩ
Unit
uA
uA
uA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V