CY7C1471BV25_11 CYPRESS [Cypress Semiconductor], CY7C1471BV25_11 Datasheet

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CY7C1471BV25_11

Manufacturer Part Number
CY7C1471BV25_11
Description
72-Mbit (2 M x 36/4 M x 18/1 M x 72) Flow-Through SRAM with NoBL Architecture
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
72-Mbit (2 M × 36/4 M × 18/1 M × 72) Flow-Through SRAM with NoBL™ Architecture
Features
Selection Guide
Cypress Semiconductor Corporation
Document Number: 001-15013 Rev. *H
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data transfers on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte Write capability
2.5 V IO supply (V
Fast clock-to-output times
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self timed writes
Asynchronous Output Enable (OE)
CY7C1471BV25,
JEDEC-standard
non-Pb-free
available in Pb-free and non-Pb-free 209-ball FBGA package.
Three Chip Enables (CE
expansion.
Automatic power down feature available using ZZ mode or CE
deselect.
IEEE 1149.1 JTAG Boundary Scan compatible
Burst Capability - linear or interleaved burst order
Low standby power
6.5 ns (for 133-MHz device)
165-ball FBGA
Description
DDQ
Pb-free
)
CY7C1473BV25
1
, CE
100-pin
package. CY7C1475BV25
2
, CE
Flow-Through SRAM with NoBL™ Architecture
TQFP,
3
) for simple depth
available
198 Champion Court
Pb-free
72-Mbit (2 M × 36/4 M × 18/1 M × 72)
133 MHz
305
120
6.5
and
in
Functional Description
The CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25
are 2.5 V, 2 M × 36/4 M × 18/1 M × 72 synchronous flow through
burst SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471BV25, CY7C1473BV25, and
CY7C1475BV25 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive read or
write operations with data transferred on every clock cycle. This
feature dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent write-read
transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by two or four Byte Write Select
(BW
with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide easy bank selection
and output tri-state control. To avoid bus contention, the output
drivers are synchronously tri-stated during the data portion of a
write sequence.
For best practice recommendations, refer to the Cypress
application note
X
) and a Write Enable (WE) input. All writes are conducted
CY7C1473BV25, CY7C1475BV25
San Jose
AN1064, SRAM System Guidelines.
100 MHz
275
120
8.5
,
CA 95134-1709
CY7C1471BV25
1
Revised May 13, 2011
, CE
2
Unit
mA
mA
, CE
ns
408-943-2600
3
) and an
[+] Feedback

Related parts for CY7C1471BV25_11

CY7C1471BV25_11 Summary of contents

Page 1

Flow-Through SRAM with NoBL™ Architecture 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Flow-Through SRAM with NoBL™ Architecture Features No Bus Latency™ (NoBL™) architecture eliminates dead ■ cycles between write and read cycles Supports up to 133 ...

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Logic Block Diagram – CY7C1471BV25 (2 M × 36) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN ADV/ READ LOGIC CE1 CE2 CE3 ZZ Logic Block Diagram – ...

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Logic Block Diagram – CY7C1475BV25 (1 M × 72) ADDRESS A0, A1, A REGISTER 0 MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ ...

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Contents Pin Configurations ........................................................... 5 Pin Definitions .................................................................. 9 Functional Overview ...................................................... 10 Single Read Accesses .............................................. 10 Burst Read Accesses ................................................ 10 Single Write Accesses ............................................... 10 Burst Write Accesses ................................................ 11 Sleep Mode ............................................................... 11 Interleaved Burst Address ...

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Pin Configurations DQP DDQ BYTE DDQ ...

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Pin Configurations (continued DDQ DDQ ...

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Pin Configurations (continued) 165-ball FBGA (15 × 17 × 1.4 mm) Pinout NC/576M NC/1G A CE2 C DQP DDQ DDQ ...

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Pin Configurations (continued) 209-ball FBGA (14 × 22 × 1.76 mm) Pinout DQg DQg B DQg DQg BWS C DQg DQg BWS D DQg DQg E DQPg DQPc F DQc DQc G DQc DQc H DQc DQc ...

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Pin Definitions Name Input- Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge 0 1 Synchronous of the CLK Input- Byte Write Inputs, ...

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Pin Definitions (continued) Name IO TDI JTAG serial input Serial Data In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG feature is Synchronous not used, leave this pin floating or connected to V available ...

Page 11

Byte Write capability is included to greatly simplify read/modify/write sequences, which can be reduced to simple byte write operations. Because the CY7C1471BV25, CY7C1473BV25, CY7C1475BV25 are common IO devices, data must not be driven into ...

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Truth Table The truth table for CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 follows. Address Operation Used Deselect Cycle None Deselect Cycle None Deselect Cycle None Continue Deselect Cycle None Read Cycle (Begin Burst) External Read Cycle (Continue Burst) Next NOP/Dummy Read External ...

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Truth Table for Read/Write The read-write truth table for CY7C1471BV25 follows. Function Read Write No bytes written Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Byte C ...

Page 14

IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25 incorporate a serial boundary scan Test Access Port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full ...

Page 15

TAP Registers Registers are connected between the TDI and TDO balls and enable the scanning of data into and out of the SRAM test circuitry. Only one register is selectable at a time through the instruction register. Data is serially ...

Page 16

Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct signal value, make certain that the SRAM signal is stabilized long enough to meet the ...

Page 17

TAP AC Switching Characteristics [11, 12] Over the Operating Range Parameter Clock t TCK Clock Cycle Time TCYC t TCK Clock Frequency TF t TCK Clock HIGH Time TH t TCK Clock LOW Time TL Output Times t TCK Clock ...

Page 18

Identification Register Definitions CY7C1471BV25 Instruction Field (2 M × 36) Revision Number (31:29) Device Depth (28:24) Architecture/Memory Type (23:18) Bus Width/Density (17:12) Cypress JEDEC ID Code (11:1) 00000110100 ID Register Presence Indicator (0) Scan Register Sizes Register Name Instruction Bypass ...

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Boundary Scan Exit Order (2 M × 36) Bit # 165-ball ID Bit # ...

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Boundary Scan Exit Order (1 M × 72) Bit # 209-ball ID Bit # ...

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Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ............................... –65 C to +150 C Ambient Temperature with Power Applied .......................................... –55C to +125 C Supply Voltage on ...

Page 22

Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description C Address Input Capacitance ADDRESS C Data Input Capacitance DATA C Control Input Capacitance CTRL C Clock Input Capacitance CLK C Input-Output Capacitance ...

Page 23

Switching Characteristics [17, 18] Over the Operating Range Parameter [19] t POWER Clock t Clock Cycle Time CYC t Clock HIGH CH t Clock LOW C]L Output Times t Data Output Valid After CLK Rise CDV t Data Output Hold ...

Page 24

Switching Waveforms Figure 5 shows read-write timing waveform CYC CLK t CENS t CENH t CH CEN t CES t CEH CE ADV/ ADDRESS D(A1) t ...

Page 25

Switching Waveforms (continued) Figure 6 shows NOP, STALL and DESELECT Cycles waveform CLK CEN CE ADV/ [A: ADDRESS D(A1) DQ COMMAND WRITE READ D(A1) Q(A2) Notes 26. For this waveform ZZ is tied LOW. ...

Page 26

Switching Waveforms (continued) Figure 7 shows ZZ Mode timing waveform. CLK ZZI I SUPPLY I ALL INPUTS (except ZZ) Outputs (Q) Notes 29. Device must be deselected when entering ZZ mode. See 30. DQs are in high ...

Page 27

Ordering Information Cypress offers other versions of this type of product in different configurations and features. The following table contains only the list of parts that are currently available. For a complete listing of all options, visit the Cypress website ...

Page 28

Package Diagrams Figure 8. 100-pin TQFP (14 × 20 × 1.4 mm), 51-85050 Document Number: 001-15013 Rev. *H CY7C1471BV25 CY7C1473BV25, CY7C1475BV25 51-85050 *D Page [+] Feedback ...

Page 29

Package Diagrams (continued) Figure 9. 165-ball FBGA (15 × 17 × 1.4 mm), 51-85165 Document Number: 001-15013 Rev. *H CY7C1471BV25 CY7C1473BV25, CY7C1475BV25 51-85165 *B Page [+] Feedback ...

Page 30

Package Diagrams (continued) Figure 10. 209-ball FBGA (14 × 22 × 1.76 mm), 51-85167 Document Number: 001-15013 Rev. *H CY7C1471BV25 CY7C1473BV25, CY7C1475BV25 51-85167 *A Page [+] Feedback ...

Page 31

Acronyms Acronym Description BWS byte write select BGA ball grid array CMOS complementary metal oxide semiconductor FBGA fine-pitch ball grid array I/O input/output JTAG Joint Test Action Group LSB least significant bit MSB most significant bit OE output enable SRAM ...

Page 32

Document History Page Document Title: CY7C1471BV25/CY7C1473BV25/CY7C1475BV25, 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Flow-Through SRAM with NoBL™ Architecture Document Number: 001-15013 Orig. of REV. ECN NO. Issue Date Change ** 1024500 See ECN VKN/KKVTMP New Data ...

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Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive cypress.com/go/automotive Clocks & ...

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