CAT28C64B CATALYST [Catalyst Semiconductor], CAT28C64B Datasheet - Page 3

• Manufacturer Part Number: CAT28C64B
• Description: 64K-Bit CMOS PARALLEL E2PROM
• Manufacturer: CATALYST [Catalyst Semiconductor]

CAPACITANCE T
RELIABILITY CHARACTERISTICS
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55 C to +125 C
Storage Temperature ....................... –65 C to +150 C
Voltage on Any Pin with
V
Package Power Dissipation
Lead Soldering Temperature (10 secs) ............ 300 C
Output Short Circuit Current
MODE SELECTION
CC
Symbol
N
T
V
I
Read
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
LTH
voltage on output pins is V
Respect to Ground
Capability (Ta = 25 C) ................................... 1.0W
Symbol
DR
ZAP
END
C
C
with Respect to Ground ............... –2.0V to +7.0V
I/O
IN
(1)
(1)(4)
(1)
(1)
(1)
(1)
Mode
Endurance
Data Retention
ESD Susceptibility
Latch-Up
A
Parameter
Input/Output Capacitance
Input Capacitance
= 25 C, f = 1.0 MHz, V
(2)
CC
........... –2.0V to +V
+0.5V, which may overshoot to V
(3)
Test
........................ 100 mA
CE
2000
H
X
L
L
Min.
100
100
10
CC
5
CC
= 5V
+ 2.0V
Max.
CC
Max.
WE
10
3
6
+2.0V for periods of less than 20 ns.
H
H
L
X
Cycles/Byte
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Units
Years
Volts
mA
Units
pF
pF
OE
H
H
X
H
L
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
CC
+1V.
Test Method
D
D
D
High-Z
High-Z
OUT
IN
IN
I/O
Conditions
V
V
I/O
IN
Doc. No. 25006-0A 2/98 P-1
= 0V
= 0V
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
Power