CAT28F010 CATALYST [Catalyst Semiconductor], CAT28F010 Datasheet - Page 4

• Manufacturer Part Number: CAT28F010
• Description: 1 Megabit CMOS Flash Memory
• Manufacturer: CATALYST [Catalyst Semiconductor]

CAT28F010
D.C. OPERATING CHARACTERISTICS
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25005-0A 2/98 F-1
CC
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
I
V
LI
LO
SB1
SB2
CC1
CC2
CC3
CC4
PPS
PP1
PP2
PP3
PP4
ID
= +5V 10%, unless otherwise specified.
IL
ILC
OL
IH
IHC
OH1
OH2
ID
LO
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input Leakage Current
Output Leakage Current
V
V
V
V
V
V
V
V
V
V
V
Input Low Level TTL
Input Low Level CMOS
Output Low Level
Input High Level TTL
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
A
A
V
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
9
9
CC
Signature Voltage
Signature Current
Standby Current
Read Current
Programming Current
Erase Current
Prog./Erase Verify Current
Standby Current CMOS
Standby Current TTL
Active Read Current
Programming Current
Erase Current
Prog./Erase Verify Current
Erase/Prog. Lockout Voltage
Parameter
V
V
Min.
CC
CC
–0.5
–0.5
11.4
2.4
2.5
2
–0.4
*0.7
4
Limits
V
V
CC
CC
Max.
0.45
100
200
200
0.8
0.8
30
15
15
15
30
30
13
10
1
5
+0.5
+0.5
1
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
V
V
V
V
CE = V
V
CE = V
V
I
V
Programming in Progress
V
Erasure in Progress
V
Erase Verify in Progress
V
V
V
Programming in Progress
V
Erasure in Progress
V
Erase Verify in Progress
I
I
I
A
A
OUT
OL
OH
OH
IN
CC
OUT
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
9
9
= V
= V
= 5.8mA, V
Test Conditions
= V
= –2.5mA, V
= –400 A, V
= V
= V
= V
= V
= V
= 5.5V, OE = V
= 5.5V, OE = V
= 5.5V
= 5.5V, CE = V
= 5.5V,
= 5.5V,
= 5.5V, Program or
= 0mA, f = 6 MHz
= V
ID
ID
CC
CC
IH
PPL
PPH
PPH
PPH
PPH
, V
CC
or V
,
,
, Program or
0.5V,
CC
or V
SS
= 5.5V
CC
CC
CC
SS
= 4.5V
,
= 4.5V
= 4.5V
IL
IH
IH
,