ATF10136 HP [Agilent(Hewlett-Packard)], ATF10136 Datasheet
ATF10136
Manufacturer Part Number
ATF10136
Description
0.5-12 GHz Low Noise Gallium Arsenide FET
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
1.ATF10136.pdf
(3 pages)
Available stocks
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Company:
Part Number:
ATF10136
Manufacturer:
NEXTWAVE
Quantity:
108
Part Number:
ATF10136TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
• Low Bias:
• High Associated Gain:
• High Output Power:
• Cost Effective Ceramic
• Tape-and Reel Packaging
Electrical Specifications, T
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Symbol
NF
G
P
G
g
I
V
DSS
0.5 dB Typical at 4 GHz
V
13.0 dB Typical at 4 GHz
20.0 dBm Typical P
Microstrip Package
Option Available
m
1 dB
P
1 dB
A
DS
O
= 2 V, I
Optimum Noise Figure: V
Gain @ NF
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain: V
Transconductance: V
Saturated Drain Current: V
Pinchoff Voltage: V
DS
DS
= 4 V, I
= 20 mA
[1]
O
DS
1 dB
; V
= 70 mA
DS
at 4 GHz
Parameters and Test Conditions
= 2 V, I
DS
DS
= 2 V, I
= 2 V, V
DS
A
DS
DS
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
DS
= 25 C
= 25 mA
= 2 V, I
= 4 V, I
= 2 V, V
DS
GS
= 1 mA
= 0 V
DS
DS
GS
= 25 mA
= 70 mA
= 0 V
5-23
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
ATF-10136
36 micro-X Package
mmho
Units
dBm
mA
dB
dB
dB
dB
dB
dB
dB
V
Min.
12.0
-4.0
70
70
Typ. Max.
16.5
13.0
11.0
20.0
12.0
140
130
-1.3
5965-8701E
0.4
0.5
0.8
180
-0.5
0.6
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ATF10136 Summary of contents
Page 1
GHz Low Noise Gallium Arsenide FET Technical Data Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias • High Associated Gain: 13.0 ...
Page 2
ATF-10136 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: ...
Page 3
Typical Scattering Parameters, Freq MHz Mag. Ang. 0.5 .98 -18 14.5 1.0 .93 -33 14.3 2.0 .79 -66 13.3 3.0 .64 -94 12.2 4.0 .54 -120 11.1 5.0 .47 -155 10.1 6.0 .45 162 7.0 .50 120 8.0 ...