ATF1040S20A ETC2 [List of Unclassifed Manufacturers], ATF1040S20A Datasheet
ATF1040S20A
Manufacturer Part Number
ATF1040S20A
Description
FAST SWITCHING THYRISTOR
Manufacturer
ETC2 [List of Unclassifed Manufacturers]
Datasheet
1.ATF1040S20A.pdf
(3 pages)
R
V
V
V
I² t
V
V
di/dt
dv/dt
td
tq
Q rr
V
V
V
I
V
P
P
T
F
FAST SWITCHING THYRISTOR
FINAL SPECIFICATION
Symbol
r
I
I
I
I
I
I rr
I
I
I
RRM
RSM
DRM
RRM
DRM
T (AV)
T (AV)
TSM
T
T(TO)
T
H
L
GT
GT
GD
FGM
FGM
RGM
GM
G(AV)
th(j-h)
j
mag 97 - ISSUE : 06
BLOCKING
CONDUCTING
SWITCHING
GATE
MOUNTING
ANSALDO
ORDERING INFORMATION : ATF1040 S 20 S
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Mean on-state current
Mean on-state current
Surge on-state current, non repetitive
I² t
On-state voltage
Threshold voltage
On-state slope resistance
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
Circuit commutated turn-off time
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
Latching current, typical
Gate trigger voltage
Gate trigger current
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
Thermal impedance, DC
Operating junction temperature
Mounting force
Mass
Characteristic
standard specification
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
V=VRRM
V=VDRM
180° sin, 50 Hz,Th=55°C, double side cooled
180° sin, 1 kHz,Th=55°C, double side cooled
sine wave, 10 ms
without reverse voltage
On-state current =
From 75% VDRM up to 1200 A, gate 10V 5 ohm
Linear ramp up to 70% of VDRM
VD=100V, gate source 20V, 10 ohm , tr=1 µs
dV/dt =
VD=5V, gate open circuit
VD=5V, tp=30µs
VD=5V
VD=5V
VD=VDRM
Pulse width 100 µs
Junction to heatsink, double side cooled
Conditions
Repetitive voltage up to
Mean on-state current
Surge current
Turn-off time
ATF1040
di/dt =
di/dt =
VR =
VDRM&VRRM/100
tq code
200 V/µs , up to 75%
20
60
50
V
A/µs, I= 1000 A
A/µs, I= 1000 A
2000 A
I =
I =
tq code
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Tx 270318 ANSUSE I -
800
1000 A
Fax Int. +39/(0)10 6442510
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
A
VDRM
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
25
25
25
25
25
25
25
25
25
25
25
Tj
2000
1075
14.0 / 17.0
0.414
2000
2100
2000
1075
1000
14
50
1.40
0.25
-30 / 125
150
150
980 x1E3
500
500
620
227
500
850
350
150
500
2.6
0.6
3.5
Value
14
50
30
10
26
5
3
V
A
kA
µs
mohm
°C/kW
Unit
A/µs
V/µs
mA
mA
A²s
mA
mA
mA
µC
kA
kN
µs
µs
W
W
°C
V
V
V
A
A
V
V
A
V
V
V
A
V
g
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ATF1040S20A Summary of contents
Page 1
ANSALDO FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 Symbol Characteristic BLOCKING V Repetitive peak reverse voltage RRM V Non-repetitive peak reverse voltage RSM V Repetitive peak off-state voltage DRM I Repetitive peak reverse current RRM I ...
Page 2
ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 1800 1600 1400 1200 1000 800 600 400 200 0 0 1000 800 600 400 200 Irr / (di/dt trr - ta ...
Page 3
ATF1040 FAST SWITCHING THYRISTOR FINAL SPECIFICATION mag 97 - ISSUE : 06 ON-STATE CHARACTERISTIC Tj = 125 °C 3500 3000 2500 2000 1500 1000 500 0 0.6 1.1 1.6 On-state Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 35 30 ...