CY8C20110_0809 CYPRESS [Cypress Semiconductor], CY8C20110_0809 Datasheet - Page 9

• Manufacturer Part Number: CY8C20110_0809
• Manufacturer: CYPRESS [Cypress Semiconductor]

Electrical Specifications
Absolute Maximum Ratings
Operating Temperature
DC Electrical Characteristics
DC Chip Level Specifications
Document Number: 001-17345 Rev. *E
T
T
V
V
V
I
ESD
LU
T
T
V
I
I
I
I
Parameter
Parameter
Parameter
MIO
DD
SB
SB
SB
A
A
STG
DD
IO
IOZ
J
DD
Supply voltage
Supply current
Deep Sleep mode current with POR
and LVD active.
Deep Sleep mode current with POR
and LVD active.
Deep Sleep mode current with POR
and LVD active.
Storage temperature
Ambient temperature with power
applied
Supply voltage on V
DC input voltage
DC voltage applied to tri-state
Maximum current into any GPIO pin
Electrostatic discharge voltage
Latch up current
Ambient temperature
Junction temperature
Description
Description
Description
DD
relative to V
SS
V
V
SS
SS
2000
–0.5
Min
–55
–25
Min
–40
–40
–40
2.40
Min
-
– 0.5
– 0.5
–
–
–
–
Typ
Typ
25
–
–
–
–
–
–
–
–
–
Typ
1.5
2.6
2.8
5.2
–
V
V
DD
DD
+100
+100
+6.0
Max
Max
+85
+50
200
+85
Max
5.25
2.5
6.4
-
4
5
+ 0.5
+ 0.5
Unit
mA
µA
µA
µA
Unit
Unit
V
mA
mA
°C
°C
ºC
ºC
V
V
V
V
Conditions are V
V
V
V
Higher storage temperatures reduce data
retention time. Recommended storage
temperature is +25°C ± 25°C (0°C to
50°C). Extended duration storage
temperatures above 65°C degrades
reliability.
Human body model ESD
DD
DD
DD
= 2.55V, 0°C < T
= 3.3V, –40°C < T
= 5.25V, –40°C < T
DD
Notes
Notes
Notes
= 3.0V, T
A
A
CY8C20110
< 40°C
A
< 85°C
Page 9 of 18
< 85°C
A
= 25°C
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