KM68257E-10 SAMSUNG [Samsung semiconductor], KM68257E-10 Datasheet - Page 5

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KM68257E-10

Manufacturer Part Number
KM68257E-10
Description
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges.
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
KM68257E, KM68257EI
WRITE CYCLE
NOTE : The above parameters are also guaranteed at industrial temperature range
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
V
Current
Address
CS
OE
Data out
CC
Parameter
I
I
SB
CC
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
WC
CW
AW
WP
WR
DW
OW
AS
DH
t
PU
t
(Address Controlled
LZ(4,5)
(WE=V
t
OLZ
t
OH
50%
t
AA
IH
Min
KM68257E-10
10
10
)
t
8
0
8
8
0
0
5
0
0
CO
- 5 -
t
OE
t
AA
,
Max
CS=OE=V
.
5
-
-
-
-
-
-
-
-
-
-
t
RC
t
RC
IL
Min
KM68257E-12
, WE=V
12
12
9
0
9
9
0
0
6
0
0
Valid Data
IH
)
Max
6
-
-
-
-
-
-
-
-
-
-
t
OHZ
Valid Data
PRELIMINARY
Min
KM68257E-15
15
10
10
10
15
CMOS SRAM
0
0
0
7
0
0
50%
t
t
t
PD
OH
HZ(3,4,5)
Max
7
-
-
-
-
-
-
-
-
-
-
August 1998
Revision 0.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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