MLX90277EGOSR0-0 MELEXIS [Melexis Microelectronic Systems], MLX90277EGOSR0-0 Datasheet - Page 14

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MLX90277EGOSR0-0

Manufacturer Part Number
MLX90277EGOSR0-0
Description
Dual Programmable Linear Hall Effect Sensor
Manufacturer
MELEXIS [Melexis Microelectronic Systems]
Datasheet
The output buffer can be configured to accommodate capacitive loads and improve the saturation voltage
(output swing). The two bit parameter, MODE, sets the current capacity of the output amplifier. Melexis sets
this parameter to 1 at final test. This parameter is not used by the end customer.
The Memory Lock feature prevents the device from entering programming mode and from any changes to the
EEPROM. The entire EEPROM is locked by setting the MEMLOCK parameter to 1. This should be the last
parameter set in the application.
A unique ID number is programmed into the EEPROM of every IC. The ID number gives Melexis additional
traceability to better service its customers. The ID number is composed of the lot number, wafer number and
wafer coordinates (X and Y). Memory is also available for the customer to add a serial number of the product
or any other data.
Figure 11-1…11-2 I
3901090277
Rev 004
11 Performance Graphs
10.11 Output Amplifier Configuration (MODE)
10.12 Memory Lock (MEMLOCK)
10.13 IC traceability
-20
-40
-60
-80
60
40
20
0
Under Voltage
-10
Typical I
DD
0
versus V
V
V
DDNOM
DD
(Volts)
Over Voltage
DD
10
VS V
DD
150
-40
25
DD
°
20
°
C
°
C
C
30
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Dual Programmable Linear Hall Effect Sensor
8.5
7.5
6.5
5.5
4.5
8
7
6
5
4
Typical I
4.5
V
MLX90277
DD
DD
(Volts)
5
VS V
DDNOM
150
-40
25
5.5
Data Sheet
°
°
C
°
Nov/06
C
C
6

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