ADG620 AD [Analog Devices], ADG620 Datasheet - Page 2

• Manufacturer Part Number: ADG620
• Description: CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES
• Manufacturer: AD [Analog Devices]

DUAL SUPPLY
ADG619/ADG620–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
ADG619
ADG620
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
I
I
DD
SS
IN
S
D,
Channels (∆R
I
t
t
Break-Before-Make Time Delay, t
t
t
Make-Before-Break Time Delay, t
INL
ON
OFF
ON
OFF
(OFF)
, Digital Input Capacitance
C
S
or I
(ON)
INH
ON
ON
1
)
)
(V
INL
INH
DD
S
D
(OFF)
= +5 V
, I
FLAT(ON)
S
(ON)
2
10%, V
)
BBM
MBB
SS
+25 C
4
6
0.7
1.1
0.7
± 0.01
± 0.25
± 0.01
± 0.25
0.005
2
80
120
45
75
40
40
65
200
330
160
110
–67
–67
190
25
95
0.001
0.001
= –5 V
10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
B Version
–40 C to
+85 C
V
8
1.35
0.8
1.2
± 1
± 1
2.4
0.8
± 0.1
155
90
10
85
400
10
1.0
1.0
SS
to V
–2–
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
V
R
V
R
V
R
V
R
V
R
V
R
V
V
Test Circuit 7
R
Test Circuit 8
R
Test Circuit 10
R
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
Digital Inputs = 0 V or 5.5 V
DD
S
S
S
DD
S
S
IN
S
S
S1
S
S
S
S
DD
L
L
L
L
L
L
L
L
L
= ± 4.5 V, I
= ± 4.5 V, I
= ± 3.3 V, I
= ± 4.5 V, V
= V
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 0 V, Test Circuit 6
= 0 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= +4.5 V, V
= +5.5 V, V
= +5.5 V, V
D
INL
S2
= ± 4.5 V, Test Circuit 3
= 3.3 V, Test Circuit 5
or V
S
= 0 Ω, C
L
L
L
S
S
S
L
L
L
L
L
L
D
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 9
INH
= –10 mA,
= –10 mA
= –10 mA
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
= 35 pF
SS
SS
SS
=
= –4.5 V
= –5.5 V
= –5.5 V
4.5 V,
L
= 1 nF,
REV. 0