BU406-A-T3P-T UTC [Unisonic Technologies], BU406-A-T3P-T Datasheet - Page 2

• Manufacturer Part Number: BU406-A-T3P-T
• Description: SILICON NPN SWITCHING TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

BU406
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collect Cutoff Current (V
Emitter Cut-off Current (I
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Turn-off Time
Second Breakdown Collector Current
* Pulse duration=300µs, duty cycle 1.5%
Collector-Base Voltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (repetitive)
Collector Peak Current (tp=10ms)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
THERMAL DATA
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RANGE
RANK
C
C
PARAMETER
PARAMETER
=0)
≤25℃)
BE
C
E
=0)
=0)
=0)
B
BE
=0)
=-1.5V)
FE
SYMBOL
V
V
CE(SAT)*
BE(SAT)*
I
I
t
Is/b
h
EBO
CES
OFF
f
FE
T
(Ta=25℃)
V
V
V
V
I
I
V
I
I
V
C
C
C
C
CE
CE
CE
BE
CE
CE
=5A, I
=5A, I
=500mA, V
=5A, I
70 ~ 120
=6V
=400V
=250V
=250V
=10V, I
=40V, t=10ms
TEST CONDITIONS
A
B
B
B
=0.5A
=0.5A
=0.5A
C
SYMBOL
SYMBOL
=500mA
CE
T
V
V
V
V
T
I
I
θ
θ
P
C
T
=10V
CBO
CEO
CEV
EBO
I
CM
CM
I
STG
C
B
JA
JC
=150°C
C
J
NPN PLANAR TRANSISTOR
-65 ~ +150
MIN
RATINGS
RATINGS
70
10
2.08
400
400
200
150
10
15
60
70
6
7
4
110 ~ 240
TYP
4
B
MAX
0.75
100
240
1.2
5
1
1
1
QW-R203-021,D
UNIT
UNIT
℃/W
℃
W
℃
℃
V
V
V
V
A
A
A
A
UNIT
/W
MHz
2 of 4
mA
mA
mA
µA
µs
V
V
A