MC74VHC32DT ON Semiconductor, MC74VHC32DT Datasheet - Page 2

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MC74VHC32DT

Manufacturer Part Number
MC74VHC32DT
Description
IC GATE OR QUAD 2-1 ADV 14-TSSOP
Manufacturer
ON Semiconductor
Series
74VHCr
Datasheet

Specifications of MC74VHC32DT

Logic Type
OR Gate
Number Of Inputs
2
Number Of Circuits
4
Current - Output High, Low
8mA, 8mA
Voltage - Supply
2 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating − SOIC Packages: – 7 mW/°C from 65° to 125°C
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
T
I
I
I
V
I
V
P
V
I
OK
out
CC
I
CC
CC
out
stg
V
V
OH
IK
OL
t
in
V
IH
in
D
IL
T
r
, t
CC
out
in
A
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power Dissipation in Still Air,
Storage Temperature
Minimum High−Level
Input Voltage
Maximum Low−Level
Input Voltage
Minimum High−Level
Output Voltage
Maximum Low−Level
Output Voltage
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature
Input Rise and Fall Time
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
Parameter
Parameter
CC
V
I
V
V
I
V
V
V
and GND Pins
OH
OL
in
in
in
in
in
in
Test Conditions
= V
= V
= V
= V
= 5.5 V or GND
= V
= 50 mA
= −50 mA
IH
IH
IH
IH
CC
I
I
Parameter
OH
OH
or V
or V
or V
or V
I
I
or GND
TSSOP Package
OL
OL
SOIC Packages
= −4.0 mA
= −8.0 mA
IL
IL
IL
IL
= 4.0 mA
= 8.0 mA
V
V
CC
CC
= 3.3 V ±0.3 V
= 5.0 V ±0.5 V
http://onsemi.com
3.0 to 5.5
3.0 to 5.5
0 to 5.5
V
2.0
2.0
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
V
CC
–0.5 to V
2
–0.5 to +7.0
–0.5 to +7.0
–65 to +150
Value
V
−20
±20
±25
±50
500
450
CC
1.50
2.58
3.94
Min
1.9
2.9
4.4
CC
x 0.7
+0.5
T
A
= 25°C
Typ
2.0
3.0
4.5
0.0
0.0
0.0
Unit
mW
mA
mA
mA
mA
°C
V
V
V
V
CC
Min
−40
2.0
Max
0.36
0.36
±0.1
0.50
0
0
0
0
0.1
0.1
0.1
2.0
x 0.3
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
out
V
This device contains protection
Unused inputs must always be
T
CC
A
2.48
3.80
1.50
Min
should be constrained to the
1.9
2.9
4.4
= −40°C to 125°C
x 0.7
+125
Max
V
100
5.5
5.5
20
CC
V
CC
in
Max
0.50
0.44
0.44
±1.0
20.0
0.1
0.1
0.1
or V
x 0.3
out
Unit
ns/V
) v V
°C
V
V
V
Unit
in
mA
mA
V
V
V
V
CC
CC
and
).
.

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