74AUP2G04GF PHILIPS [NXP Semiconductors], 74AUP2G04GF Datasheet

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74AUP2G04GF

Manufacturer Part Number
74AUP2G04GF
Description
Low-power dual inverter
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1. General description
2. Features
The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial Power-down applications using I
The I
the device when it is powered down.
The 74AUP2G04 provides two inverting buffers.
CC
74AUP2G04
Low-power dual inverter
Rev. 01. — 16 January 2006
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114-C Class 3A. Exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 A (maximum)
CC
Preliminary data sheet
OFF
.

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74AUP2G04GF Summary of contents

Page 1

Low-power dual inverter Rev. 01. — 16 January 2006 1. General description The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant ...

Page 2

... L [2] The condition Ordering information Table 2: Ordering information Type number Package Temperature range Name 74AUP2G04GW +125 C 74AUP2G04GM +125 C 74AUP2G04GF +125 C 74AUP2G04_1 Preliminary data sheet Quick reference data = ns. amb r f Parameter Conditions HIGH-to-LOW and ...

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... Philips Semiconductors 5. Marking Table 3: Type number 74AUP2G04GW 74AUP2G04GM 74AUP2G04GF 6. Functional diagram Fig 1. Logic symbol Fig 3. Logic diagram (one gate) 7. Pinning information 7.1 Pinning Fig 4. Pin configuration SOT363 (SC-88) 74AUP2G04_1 Preliminary data sheet Marking mnb079 A 74AUP2G04 GND ...

Page 4

Philips Semiconductors Fig 6. Pin configuration SOT891 (XSON6) 7.2 Pin description Table 4: Symbol 1A GND Functional description 8.1 Function table Table 5: Input [ HIGH voltage level; L ...

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Philips Semiconductors 9. Limiting values Table 6: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol ...

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Philips Semiconductors 11. Static characteristics Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...

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Philips Semiconductors Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...

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Philips Semiconductors Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +125 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...

Page 9

Philips Semiconductors 12. Dynamic characteristics Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb HIGH-to-LOW and PHL ...

Page 10

Philips Semiconductors Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb C power dissipation capacitance f PD [1] All typical values are measured at nominal ...

Page 11

Philips Semiconductors Table 10: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter HIGH-to-LOW and PHL PLH LOW-to-HIGH propagation delay ...

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Philips Semiconductors Fig 8. Load circuitry for switching times Table 12: Supply voltage 3.6 V [1] For measuring enable and disable times R and pulse width R 74AUP2G04_1 Preliminary data sheet V I PULSE GENERATOR ...

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Philips Semiconductors 14. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 ...

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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...

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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...

Page 16

Philips Semiconductors 15. Abbreviations Table 13: Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor Transistor Logic 16. Revision history Table ...

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Philips Semiconductors 17. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

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Philips Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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