74AUP2G04GF PHILIPS [NXP Semiconductors], 74AUP2G04GF Datasheet
74AUP2G04GF
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74AUP2G04GF Summary of contents
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Low-power dual inverter Rev. 01. — 16 January 2006 1. General description The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant ...
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... L [2] The condition Ordering information Table 2: Ordering information Type number Package Temperature range Name 74AUP2G04GW +125 C 74AUP2G04GM +125 C 74AUP2G04GF +125 C 74AUP2G04_1 Preliminary data sheet Quick reference data = ns. amb r f Parameter Conditions HIGH-to-LOW and ...
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... Philips Semiconductors 5. Marking Table 3: Type number 74AUP2G04GW 74AUP2G04GM 74AUP2G04GF 6. Functional diagram Fig 1. Logic symbol Fig 3. Logic diagram (one gate) 7. Pinning information 7.1 Pinning Fig 4. Pin configuration SOT363 (SC-88) 74AUP2G04_1 Preliminary data sheet Marking mnb079 A 74AUP2G04 GND ...
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Philips Semiconductors Fig 6. Pin configuration SOT891 (XSON6) 7.2 Pin description Table 4: Symbol 1A GND Functional description 8.1 Function table Table 5: Input [ HIGH voltage level; L ...
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Philips Semiconductors 9. Limiting values Table 6: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol ...
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Philips Semiconductors 11. Static characteristics Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +125 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V ...
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Philips Semiconductors 12. Dynamic characteristics Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb HIGH-to-LOW and PHL ...
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Philips Semiconductors Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb C power dissipation capacitance f PD [1] All typical values are measured at nominal ...
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Philips Semiconductors Table 10: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter HIGH-to-LOW and PHL PLH LOW-to-HIGH propagation delay ...
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Philips Semiconductors Fig 8. Load circuitry for switching times Table 12: Supply voltage 3.6 V [1] For measuring enable and disable times R and pulse width R 74AUP2G04_1 Preliminary data sheet V I PULSE GENERATOR ...
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Philips Semiconductors 14. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...
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Philips Semiconductors 15. Abbreviations Table 13: Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor Transistor Logic 16. Revision history Table ...
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Philips Semiconductors 17. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
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Philips Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...