AT49BV322AT ATMEL [ATMEL Corporation], AT49BV322AT Datasheet - Page 23

• Manufacturer Part Number: AT49BV322AT
• Description: 32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory
• Manufacturer: ATMEL [ATMEL Corporation]

Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
3308H–FLASH–5/04
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BP
BPD
AS
AH
DS
DH
WP
WPH
WC
RP
EC
SEC1
SEC2
ES
PS
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
(See note 3 under “Command Definitions in Hex” on page 12.)
Parameter
Byte/Word Programming Time
Byte/Word Programming Time in Dual Programming Mode
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Write Cycle Time
Reset Pulse Width
Chip Erase Cycle Time
Sector Erase Cycle Time (4K Word Sectors)
Sector Erase Cycle Time (32K Word Sectors)
Erase Suspend Time
Program Suspend Time
A0-A20
DATA
WE
OE
CE
A0 - A20
(1)
DATA
WE
OE
CE
t
AS
t
AS
555
t
WC
WORD 0
t
AH
AA
555
t
WC
t
AH
t
t
WP
DS
AA
AAA
t
t
DS
WP
WORD 1
t
DH
AAA
55
t
DH
55
555
t
WPH
WORD 2
555
80
PROGRAM CYCLE
t
WPH
A0
555
WORD 3
ADDRESS
AA
INPUT
DATA
AAA
WORD 4
55
Min
500
35
35
35
35
70
0
0
t
BP
Note 2
WORD 5
Note 3
555
Typ
0.3
1.0
t
12
50
EC
AT49BV322A(T)
6
AA
Max
200
100
3.0
5.0
15
10
seconds
seconds
seconds
Units
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
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