CY62127DV30L CYPRESS [Cypress Semiconductor], CY62127DV30L Datasheet - Page 4

• Manufacturer Part Number: CY62127DV30L
• Description: 1-Mb (64K x 16) Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05229 Rev. *H
AC Test Loads and Waveforms
Thermal Resistance
Data Retention Waveform
Notes:
Data Retention Characteristics
10. BHE
V
I
t
t
Parameter
8. Test condition for the 45-ns part is a load capacitance of 30 pF.
9. Full device operation requires linear V
Parameter
CCDR
CDR
R
DR
[9]
BHE . BLE
θ
θ
[7]
JC
JA
BHE . BLE
.
BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.
CE or
V
CE or
CC
V
CC
Parameters
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
OUTPUT
CC
INCLUDING
R
V
R1
R2
V
TH
TH
for Data Retention
CC
JIG AND
SCOPE
Description
50 pF
[7]
Description
R1
CC
[10]
ramp from V
[8]
R2
V
V
V
V
t
CC(min.)
CDR
t
CC
IN
CC(min.)
CDR
2.5V (2.2V - 2.7V)
DR
> V
=1.5V, CE > V
to V
CC
16600
15400
CC(min.)
8000
1.20
Rise Time = 1 V/ns
− 0.2V or V
> 200 µs.
V
Still Air, soldered on a 3 x 4.5 inch,
DATA RETENTION MODE
DATA RETENTION MODE
CC
Conditions
CC
two-layer printed circuit board
GND
− 0.2V,
IN
Equivalent to:
< 0.2V
OUTPUT
V
V
Test Conditions
DR
DR
10%
> 1.5V
> 1.5V
3.0V (2.7V - 3.6V)
L
L
LL
ALL INPUT PULSES
90%
1103
1554
1.75
645
THEVENIN
Ind’l
Auto
Ind’l
R
TH
Min.
200
1.5
EQUIVALENT
0
V CC(min.)
V CC(min.)
90%
FBGA
t
V
R
t
R
55
12
10%
Typ
Fall Time = 1 V/ns
CY62127DV30
.[4]
TSOP II
Unit
76
11
Max.
Ω
Ω
Ω
V
10
4
3
Page 4 of 11
°C/W
°C/W
Unit
Unit
µA
ns
µs
V
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