CY62148 CYPRESS [Cypress Semiconductor], CY62148 Datasheet - Page 5

• Manufacturer Part Number: CY62148
• Description: 512K x 8 MoBL Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Switching Characteristics
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
5.
6.
7.
8.
9.
Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to V
specified I
At any given temperature and voltage condition, t
t
The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
The minimum write cycle time for Write Cycle #3 (WE controlled, OE LOW) is the sum of t
HZOE
, t
Parameter
HZCE
OL
, and t
/I
OH
[8, 9]
and 30 pF load capacitance.
HZWE
are specified with C
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
Over the Operating Range
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured ±200 mV from steady-state voltage.
HZCE
is less than t
[6]
[6]
Description
[6, 7]
[6, 7]
[6]
[7 ]
LZCE
[5]
, t
HZOE
5
is less than t
HZWE
LZOE
and t
, and t
SD
HZWE
.
Min.
70
10
10
70
60
60
50
30
10
5
0
0
0
0
is less than t
Operation)
(2.7V–3.6V
CY62148V MoBL™
CC(typ.)
LZWE
Max.
, and output loading of the
70
70
35
25
25
70
25
for any given device.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns