NAND01G-A STMICROELECTRONICS [STMicroelectronics], NAND01G-A Datasheet - Page 46
NAND01G-A
Manufacturer Part Number
NAND01G-A
Description
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.NAND01G-A.pdf
(57 pages)
- Current page: 46 of 57
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Ready/Busy Signal Electrical Characteristics
Figures 35,
teristics for the Ready/Busy signal. The value re-
quired for the resistor R
the following equation:
So,
where I
devices tied to the Ready/Busy signal. R
determined by the maximum value of t
Figure 34. Ready/Busy AC Waveform
Figure 36. Resistor Value Versus Waveform Timings For Ready/Busy Signal
Note: T = 25°C.
46/57
R P min
ready V DD
400
300
200
100
R P min 1.8V
L
0
R P min 3V
is the sum of the input currents of all the
1
1.7
30
1.7
34
=
t f
----------------------------------------------------------- -
and
V DDmax V OLmax
V OL
V DD = 1.8V, C L = 30pF
36
2
=
0.85
60
1.7
I OL
=
show the electrical charac-
busy
P
---------------------------
8mA
R P (K
---------------------------
3mA
can be calculated using
–
+
3.2V
1.85V
+
I L
+
3
1.7
0.57
I L
90
I L
t r
r
.
V OH
t f
P
AI07564B
max is
4
1.7
0.43
120
2
1
3
4
t r
Figure 35. Ready/Busy Load Circuit
400
300
200
100
0
1
100
3.6
2.4
DEVICE
V SS
V DD
ibusy
V DD = 3.3V, C L = 100pF
2
200
3.6
1.2
R P (K
R P
Open Drain Output
RB
3
300
3.6
0.8
400
ibusy
4
3.6
2
1
3
0.6
4
ai07565B
AI07563B
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