NAND01G-M STMICROELECTRONICS [STMicroelectronics], NAND01G-M Datasheet
NAND01G-M
Related parts for NAND01G-M
NAND01G-M Summary of contents
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... Sequential access: 50ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering August 2006 NAND256-M NAND512-M, NAND01G-M FBGA TFBGA107 10 1.2mm TFBGA149 10 x 13.5 x 1.2mm LFBGA137 10 1.4mm TFBGA137 10 1.2 mm (1) Preliminary specifications ...
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... SDR (2x16) (2x256Mbit 512Mbit (x8) 3V SDR x16) 1.8V,104Mhz 512 Mbit SDR (2x16 256Mbit 2 x 512Mbit NAND (x8) 3V SDR x16) 1.8V, 104MHz 1 Gbit NAND (x8) 3V 512Mbit SDR (x32) 1.8V, 133MHz NAND256-M, NAND512-M, NAND01G-M LPSDRAM Product Package TFBGA107 TFBGA149 TFBGA149 TFBGA107 TFBGA149 TFBGA149 ...
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... NAND256-M, NAND512-M, NAND01G-M Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 NAND Flash Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 LPSDRAM Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3 Package Mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4 Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Contents 3/23 ...
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... TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Mechanical Data Table 8. LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data Table 9. TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch . . . . . . . . . . . . . . . . . . . . 20 Table 10. Ordering Information Scheme Table 11. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4/23 NAND256-M, NAND512-M, NAND01G-M ...
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... NAND256-M, NAND512-M, NAND01G-M List of figures Figure 1. Logic Diagram: NAND Flash & SDR LPSDRAM Figure 2. Logic Diagram: NAND Flash & SDR LPSDRAMs Figure 3. Logic Diagram: NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 4. TFBGA107 Connections (Top view through package Figure 5. TFBGA149 Connections (Top view through package Figure 6 ...
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... This datasheet should be read in conjunction with the NAND Flash and LPSDRAM datasheets. NAND Flash Component The NAND256-M, NAND512-M and NAND01G-M devices contain a 1.8V, 256 Mbit or 512 Mbit, x8 528 Byte Page or x16 264 Word Page, NAND Flash memory with the Chip Enable Don’t Care option. ...
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... M65KG512AB: 512Mbit (x16) Double Data Rate (DDR) LPSDRAM one M65KC512AB: 512Mbit (x32) Single Data Rate (SDR) LPSDRAM Refer to Table 1: Product M, NAND256-M and NAND01G-M devices. For detailed information on how to use the SDR LPSDRAM devices, refer to the M65KA256AL and M65KC512AB datasheets which are available from your local STMicroelectronics distributor. ...
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... CAS DQM0 DQM1 V DDD V DDQD V SSD V SSQD NC 8/23 NAND256-M, NAND512-M, NAND01G-M NAND Flash Data Inputs/Outputs for x8 devices Data Inputs/Outputs for x16 devices Address Latch Enable Command Latch Enable Chip Enable Read Enable Ready/Busy (open-drain output) Write Enable Write Protect Supply Voltage Ground ...
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... NAND256-M, NAND512-M, NAND01G-M Figure 2. Logic Diagram: NAND Flash & SDR LPSDRAMs DDQD DDD DDF 13 A0-A12 2 I/O0-I/O7, x8/x16 BA0-BA1 I/O8-I/O15, x16 DQ0-DQ15 x16 SDR0 NAND256 NAND512-M AL NAND01G-M DQ16-DQ31 x16 SDR1 RAS CAS V SS Summary description ...
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... DQM0 DQM1 DQM2 DQM3 V DDD V DDQD V SSD V SSQD NC 10/23 NAND256-M, NAND512-M, NAND01G-M NAND Flash Data Inputs/Outputs Address Latch Enable Command Latch Enable Chip Enable Read Enable Ready/Busy (open-drain output) Write Enable Write Protect Supply Voltage Ground SDR LPSDRAM Row Address: RA0-RA11 Column Address: CA0-CA8 ...
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... NAND256-M, NAND512-M, NAND01G-M Figure 3. Logic Diagram: NAND Flash & DDR LPSDRAM DDQD DDD DDF 13 A0-A12 2 BA0-BA1 NAND256-M CL NAND512-M WP NAND01G RAS CAS DQM0 DQM1 SSQD SSF SSD Summary description 16 I/O0-I/O15 DQ0-DQ15 UDQS-LDQS RB Ai11023b 11/23 ...
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... CAS DQM0 DQM1 V DDD V DDQD V SSD V SSQD NC DU 12/23 NAND256-M, NAND512-M, NAND01G-M NAND Flash Data Inputs/Outputs Address Latch Enable Command Latch Enable Chip Enable Read Enable Ready/Busy (open-drain output) Write Enable Write Protect Supply Voltage Ground DDR LPSDRAM Address Inputs A10 determines the Precharge mode. ...
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... NAND256-M, NAND512-M, NAND01G-M Figure 4. TFBGA107 Connections (Top view through package SSD V DDQD D V SSQD E V DDQD F V SSD G V DDD H V SSQD DDQD L V SSQD DQ11 V DDD DDF V SSF DQ0 ...
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... DQM0 DQM1 LDQS UDQS DQ0 DQ3 DQ1 DQ6 DQ8 DQ4 DQ2 DQ5 DQ7 DQ9 V DDQD V SSQD V SSD V DDD NAND256-M, NAND512-M, NAND01G DDD V SSD I/ I/O6 I/O15 A6 NC I/O5 I/O14 A5 I/O4 I/O13 I/O12 NC ...
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... NAND256-M, NAND512-M, NAND01G-M LFBGA137 and TFBGA137 Connections (Top view through package) Figure SSD DDD A12 A11 F NC RAS G V DDD CAS H V SSD BA1 DDD V SSD M I/O0 I/ ...
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... Dissipation 1. TBD stands for To Be Defined. 2. Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may overshoot to V 16/23 NAND256-M, NAND512-M, NAND01G-M Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature NAND Flash Input or Output ...
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... NAND256-M, NAND512-M, NAND01G-M 3 Package Mechanical Figure 7. TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline BALL "B1" Drawing not to scale. Table 6. TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data Symbol Typ 0.80 b 0.45 D 10. ...
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... millimeters Min Max 1.200 0.250 0.400 0.500 9.900 10.100 0.100 13.400 13.600 – – – – – – NAND256-M, NAND512-M, NAND01G-M b ddd BGA-Z78 inches Typ Min 0.0098 0.0315 0.0177 0.0157 0.3937 0.3898 0.3465 0.5315 0.5276 0.4724 0.0315 – ...
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... NAND256-M, NAND512-M, NAND01G-M Figure 9. LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline BALL "B1" Subject to change without prior notice. Table 8. LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data millimeters Symbol Typ 1.00 b 0.45 D 10. ...
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... A 1. Subject to change without prior notice. Table 9. TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch Symbol Typ 0.80 b 0.45 D 10.50 D1 7.20 E 13.00 E1 11.20 e 0.80 FD 1.65 FE 0.90 SD 0.40 20/23 NAND256-M, NAND512-M, NAND01G millimeters Min Max 1.20 0.25 0.40 0.50 10.40 10.60 12.90 13.10 – – – – ddd A2 BGA-Z83 inches Typ Min 0 ...
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... NAND256-M, NAND512-M, NAND01G-M 4 Part Numbering Table 10. Ordering Information Scheme Example: Device Type NAND Flash Memory NAND Flash Density 256 = 256Mb 512 = 512Mb 01G = 1Gb Operating Voltage 1.7V to 1.95V DDF 2.5V to 3.6V DDF NAND Bus Width x16 Family Identifier M = 528 Byte Page NAND Flash + LPSDRAM ...
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... NAND512W3M2 part number added in 4 Figure 5: TFBGA149 Connections (Top view through package) LPSDRAM supply voltage changed to 1.7 to 1.9V. 1 Gbit (x8) 3V NAND Flash memory and 512Mbit SDR (x32) 1.8V, 133MHz LPSDRAM added for NAND01GW3M2. 5 TFBGA137 package added. NAND256-M, NAND512-M, NAND01G-M Revision Details Table 1: Product List. updated. ...
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... NAND256-M, NAND512-M, NAND01G-M Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...