M27C801-100B1TR STMICROELECTRONICS [STMicroelectronics], M27C801-100B1TR Datasheet - Page 5

• Manufacturer Part Number: M27C801-100B1TR
• Description: 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 7. Read Mode DC Characteristics
(T
Note: 1. V
Table 8A. Read Mode AC Characteristics
(T
Note: 1. V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
t
t
Symbol
GHQZ
EHQZ
Symbol
A
A
t
t
t
t
will not occur.
V
AVQV
ELQV
GLQV
AXQX
I
I
V
= 0 to 70 °C or –40 to 85 °C; V
V
= 0 to 70 °C or –40 to 85 °C; V
I
I
I
V
IH
CC1
CC2
I
CC
LO
PP
2. Maximum DC voltage on Output is V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
OH
OL
LI
IL
(2)
(2)
(2)
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
t
t
t
Alt
ACC
t
t
t
CE
OE
OH
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
DF
DF
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Address Transition to Output
Transition
Parameter
Parameter
CC
CC
CC
+0.5V.
= 5V ± 10%)
= 5V ± 10%)
(1)
(1)
PP
PP
I
and removed simultaneously or after V
and removed simultaneously or after V
OUT
GV
GV
GV
GV
E = V
Condition
0V
E = V
E = V
E = V
E = V
Test Condition
0V
E > V
I
PP
PP
PP
PP
Test
OH
I
= 0mA, f = 5MHz
I
OL
V
OH
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
IL
= V
= V
= V
= V
PP
E = V
V
, GV
= –100 A
IL
IL
IL
IL
= 2.1mA
V
CC
OUT
= –1mA
,
,
IN
= V
IL
IL
IL
IL
– 0.2V
PP
IH
CC
V
Min
V
= V
CC
0
0
0
CC
-45
IL
,
(3)
Max
45
45
25
25
25
Min
V
M27C801
0
0
0
CC
–0.3
Min
3.6
PP
PP.
-60
2
– 0.7
.
Max
60
60
30
25
25
Min
V
0
0
0
CC
Max
±10
±10
100
0.8
0.4
35
10
1
-70
+ 1
M27C801
Max
70
70
35
30
30
Unit
mA
mA
Unit
V
V
V
V
V
A
A
A
A
ns
ns
ns
ns
ns
ns
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