HYB39S64160AT-10 SIEMENS [Siemens Semiconductor Group], HYB39S64160AT-10 Datasheet - Page 24

• Manufacturer Part Number: HYB39S64160AT-10
• Description: 64 MBit Synchronous DRAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

CLK
DQM
COMMAND
4 2. Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2)
4. 3. Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3
Semiconductor Group
CAS latency = 2
t
CAS latency = 3
t
CAS latency = 2
t
CLK
DQM
COMMAND
CK2,
CK3,
CK2,
: “H” or “L”
: “H” or “L”
DQ’s
DQ’s
DQ’s
NOP
T0
T0
NOP
READ A
T1
T1
NOP
NOP
T2
ACTIVATE
T2
BANK A
t
DQZ
DOUT A 0
NOP
T3
T3
NOP
24
t
DQZ
Must be Hi-Z before
the Write Command
DOUT A 1
READ A
DOUT A 0
1 Clk Interval
T4
T4
READ A
Must be Hi-Z before
the Write Command
t
DQW
NOP
T5
WRITE A
T5
DIN A 0
64MBit Synchronous DRAM
HYB39S64400/800/160AT(L)
t
DQW
WRITE B
DIN B 0
DIN B 0
T6
T6
DIN A 1
NOP
DIN B 1
NOP
DIN B 1
T7
T7
DIN A 2
NOP
DIN B 2
NOP
DIN B 2
T8
T8
DIN A 3
NOP