M5M5W816WG RENESAS [Renesas Technology Corp], M5M5W816WG Datasheet - Page 2

• Manufacturer Part Number: M5M5W816WG
• Description: 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
• Manufacturer: RENESAS [Renesas Technology Corp]

2002.04.18
M5M5W816WG - 55HI, 70HI, 85HI
PIN CONFIGURATION
-40 ~ +85°C
organized as 524288-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.18µm CMOS technology .
simple interf acing , battery operating and battery backup are the
important design objectiv es.
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm.
compaction of m ounting area as well as f lexibility of wiring pattern
of printed circuit boards.
DESCRIPTION
temperature
The M5M5W816 is a f amily of low v oltage 8-Mbit static RAMs
Operating
I-version
The M5M5W816 is suitable f or memory applications where a
M5M5W816WG is packaged in a CSP (chip scale package),
Version,
M5M5W816WG -55HI
M5M5W816WG -70HI
M5M5W816WG -85HI
Ver. 6.0
Outline : 48F7Q
NC : No Connection
*Don't connect E3 ball to voltage level more than 0V.
Part name
G
H
A
B
C
D
E
F
DQ16
DQ14
GND
DQ11
BC1#
VCC
DQ9
A18
1
It giv es the best solution f or a
DQ15
DQ13
DQ12
DQ10
BC2#
OE#
N.C.
A8
2
(TOP VIEW)
NC or
GND
A17
A14
A12
3
A0
A3
A5
A9
2.7 ~ 3.6V
Supply
Power
A16
A15
A10
A13
A4
A1
A6
A7
4
DQ2
DQ4
DQ5
DQ7
S1#
A11
W#
5
A2
DQ1
DQ3
GND
VCC
DQ6
DQ8
N.C.
S2
6
Access time
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
55ns
70ns
85ns
max.
* Ty pical(3.0V)
FEATURES
- Single 2.7~3.6V power supply
- Small stand-by current: 0.1µA (2V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1#, S2, BC1# and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prev ents data contention in the I/O bus
- Process technology : 0.18µm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
25°C
0.5
Stand-by c urrent
40°C
1.0
* Typical parameter indicates the value for the center
of distribution, and is not 100% tested.
DQ1 ~ DQ16
25°C
Ratings (max.
A0 ~ A18
5.0
GND
Pin
BC1#
BC2#
OE#
Vcc
S1#
W#
S2
40°C
8.0
(µA)
Upper By te (DQ9 ~ 16)
Lower By te (DQ1 ~ 8)
Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Power supply
Ground supply
70°C 85°C
@ Vcc=3.6V
20
Function
MITSUBISHI LSIs
40
)
*(3.0V, ty p.)
(10MHz)
current
(1MHz)
Activ e
30mA
5mA
Icc1
1