N04L1618C2AB NANOAMP [NanoAmp Solutions, Inc.], N04L1618C2AB Datasheet - Page 8

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N04L1618C2AB

Manufacturer Part Number
N04L1618C2AB
Description
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
Manufacturer
NANOAMP [NanoAmp Solutions, Inc.]
Datasheet
NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Timing Waveform of Write Cycle (WE control)
Timing Waveform of Write Cycle (CE1 Control)
LB, UB
WE
Data Out
Address
CE1
(for CE2 Control, use
inverted signal)
Data In
WE
Data In
CE1
CE2
LB, UB
Data Out
Address
High-Z
(DOC# 14-02-016 REV G ECN# 01-1266)
t
AS
t
AS
t
LZ
t
WHZ
t
LBW
t
LBW
t
t
AW
AW
t
t
CW
, t
CW
, t
t
t
WC
WC
UBW
UBW
t
WP
t
t
WP
WHZ
t
t
DW
DW
Data Valid
Data Valid
High-Z
High-Z
N04L1618C2A
t
WR
t
WR
t
t
t
DH
DH
OW

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