N04L163WC1AB NANOAMP [NanoAmp Solutions, Inc.], N04L163WC1AB Datasheet - Page 3

• Manufacturer Part Number: N04L163WC1AB
• Description: 4Mb Ultra-Low Power Asynchronous CMOS SRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Functional Block Diagram
Functional Description
1. When UB and LB are in select mode (low), I/O
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
1. These parameters are verified in device characterization and are not 100% tested
CE
are affected as shown. When UB is in the select mode only I/O
isolated from any external influence and disabled from exerting any influence externally.
H
L
L
L
L
Address
Inputs
A4 - A17
Address
Inputs
A0 - A3
Input Capacitance
I/O Capacitance
CE
WE
OE
UB
LB
WE
Item
X
X
H
H
L
1
OE
X
H
X
X
L
Page
Address
Decode
Logic
3
Word
Address
Decode
Logic
Control
Logic
UB
L
L
L
X
H
1
1
1
Symbol
C
C
I/O
IN
LB
L
L
L
(DOC# 14-02-018 REV I ECN# 01-1001)
X
H
1
1
1
0
- I/O
16K Page
x 16 word
x 16 bit
RAM Array
15
are affected as shown. When LB only is in the select mode only I/O
I/O
V
V
Data Out
Data In
IN
IN
High Z
High Z
High Z
0
- I/O
= 0V, f = 1 MHz, T
= 0V, f = 1 MHz, T
8
- I/O
Test Condition
15
1
15
are affected as shown.
A
A
= 25
= 25
N04L163WC1A
Standby
Standby
MODE
Write
Active
Read
o
o
C
C
3
2
2
Input/
Output
Mux
and
Buffers
Min
I/O8 - I/O15
I/O0 - I/O7
Max
POWER
Standby
Standby
8
8
Active
Active
Active
Unit
pF
pF
0
- I/O
7
3