S-8261AALMD-G2L-T2 SII [Seiko Instruments Inc], S-8261AALMD-G2L-T2 Datasheet
S-8261AALMD-G2L-T2
Related parts for S-8261AALMD-G2L-T2
S-8261AALMD-G2L-T2 Summary of contents
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... The overdischarge hysteresis is released by detecting negative voltage at the VM pin (−0.7 V typ.). (Charger detection function) • When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger detection voltage (−0.7 V typ.), the output voltage of the CO pin goes low. (Abnormal ...
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... BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Packages Package name SOT-23-6 6-Pin SNB(B) 2 Drawing code Package Tape MP006-A MP006-A BD006-A BD006-A Seiko Instruments Inc. Rev.1.9 _00 Reel MP006-A BD006-A ...
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... VSS Remark All the diodes shown in the figure are parasitic diodes. 2. Product with 0 V Battery Charge Inhibition Function VDD VSS Remark All the diodes shown in the figure are parasitic diodes. BATTERY PROTECTION IC FOR SINGLE-CELL PACK DP Output control circuit Oscillator control circuit ...
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... Refer to the taping specifications. *2. Refer to the Product Name List − xxx − direction in tape specifications T2: SOT-23-6 TF: 6-Pin SNB(B) Product name (abbreviation) Package name (abbreviation) MD: SOT-23-6 BD: 6-Pin SNB(B) Serial code Assigned from alphabetical order Seiko Instruments Inc. Rev.1.9 _00 *1 *2 ...
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... Rev.1.9 _00 2. Product Name List Overcharge Model No. detection voltage [V S-8261AAGMD-G2G-T2 S-8261AAHMD-G2H-T2 S-8261AAJBD-G2J-TF S-8261AAJMD-G2J-T2 S-8261AALMD-G2L-T2 S-8261AAMMD-G2M-T2 S-8261AANMD-G2N-T2 S-8261AAOMD-G2O-T2 S-8261AAPMD-G2P-T2 S-8261AARBD-G2R-TF S-8261AARMD-G2R-T2 S-8261AASMD-G2S-T2 S-8261AAUMD-G2U-T2 S-8261AAVBD-G2V-TF S-8261AAXMD-G2X-T2 S-8261AAZMD-G2Z-T2 S-8261ABAMD-G3A-T2 S-8261ABBMD-G3B-T2 S-8261ABCMD-G3C-T2 S-8261ABDBD-G3D-TF S-8261ABEBD-G3E-TF S-8261ABGBD-G3G-TF S-8261ABHBD-G3H-TF S-8261ABIBD-G3I-TF S-8261ABJMD-G3J-T2 S-8261ABKMD-G3K-T2 S-8261ABLBD-G3L-TF S-8261ABMMD-G3M-T2 S-8261ABNMD-G3N-T2 S-8261ABOBD-G3O-TF S-8261ABPMD-G3P-T2 S-8261ABRMD-G3R-T2 ...
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... BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Model No. S-8261AAGMD-G2G-T2 S-8261AAHMD-G2H-T2 S-8261AAJBD-G2J-TF S-8261AAJMD-G2J-T2 S-8261AALMD-G2L-T2 S-8261AAMMD-G2M-T2 S-8261AANMD-G2N-T2 S-8261AAOMD-G2O-T2 S-8261AAPMD-G2P-T2 S-8261AARBD-G2R-TF S-8261AARMD-G2R-T2 S-8261AASMD-G2S-T2 S-8261AAUMD-G2U-T2 S-8261AAVBD-G2V-TF S-8261AAXMD-G2X-T2 S-8261AAZMD-G2Z-T2 S-8261ABAMD-G3A-T2 S-8261ABBMD-G3B-T2 S-8261ABCMD-G3C-T2 S-8261ABDBD-G3D-TF S-8261ABEBD-G3E-TF S-8261ABGBD-G3G-TF S-8261ABHBD-G3H-TF S-8261ABIBD-G3I-TF S-8261ABJMD-G3J-T2 S-8261ABKMD-G3K-T2 S-8261ABLBD-G3L-TF S-8261ABMMD-G3M-T2 S-8261ABNMD-G3N-T2 S-8261ABOBD-G3O-TF S-8261ABPMD-G3P-T2 S-8261ABRMD-G3R-T2 S-8261ABSMD-G3S-T2 Remark It is possible to change the detection voltages of the product other than above ...
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... Positive power input pin 6 VSS Negative power input pin Pin No. Symbol FET gate control pin for charge 1 CO (CMOS output) Voltage detection pin between VM and VSS 2 VM (Overcurrent detection pin) FET gate control pin for discharge 3 DO (CMOS output) 4 VSS Negative power input pin ...
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... SNB(B) Operating temperature range Storage temperature range Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. *1. Even pulse (µs) noise exceeding the above input voltage (V allow such noise to be applied ...
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... V BATTERY CHARGING FUNCTION battery charge starting charger voltage 0 V battery charge inhibition battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. BATTERY PROTECTION IC FOR SINGLE-CELL PACK Table 5 Test ...
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... VSS [0 V BATTERY CHARGING FUNCTION battery charge starting charger voltage 0 V battery charge inhibition battery voltage *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production Table 6 Test ...
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... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. BATTERY PROTECTION IC FOR SINGLE-CELL PACK Table 7 Test ...
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... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. S-8261AAV Parameter [DELAY TIME] 25 °C ...
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... Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. S-8261ABG, S-8261ABI, S-8261ABL Parameter [DELAY TIME] 25°C ...
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... Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time *1. Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design, not tested in production. 14 Table 13 Test Symbol ...
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... V1 = 1.8 V and until the voltage V1 becomes The charger detection voltage can be measured only in the product whose overdischarge hysteresis V Set V1 = 3.5 V and Decrease V2 from 0 V gradually. The voltage between VM and VSS when V goes from “H” to “L” is the abnormal charge current detection voltage. The abnormal charge current ...
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... V to 0.35 V under the set condition 3.5 V and V2=0 V. The overcurrent 2 detection delay time (t momentarily increases (within 10 µs) from 0.7 V under the set condition 3.5 V and The load short-circuiting detection delay time (t momentarily increases (within 10 µs) from 1.6 V under the set condition 3.5 V and ...
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... VDD V1 S-8261 series VSS DO COM Test Circuit 3 VDD V1 S-8261 series VSS DO Oscilloscope Oscilloscope COM Test Circuit 5 BATTERY PROTECTION IC FOR SINGLE-CELL PACK 0INH + 0 higher) when the voltage V1 is gradually increased from the starting ...
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... Overcurrent Condition (Detection of Overcurrent 1, Overcurrent 2 and Load Short-circuiting) When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped ...
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... S-8261 Series turns the discharging control FET off to stop discharging. This condition is called the overdischarge condition. When the discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between VM and VDD in the IC (R the VM and VDD then is 1.3 V (typ.) or lower, the current consumption is reduced to the power-down current consumption (I PDN The power-down condition is released when a charger is connected and the voltage difference between the VM and VDD becomes 1 ...
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... Pin The DP pin is a test pin for delay time measurement and it should be open in the actual application capacitor whose capacitance is larger than 1000 resister whose resistance is less than 1 MΩ is connected to this pin, error may occur in the delay times or in the detection voltages. ...
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... This function inhibits the recharging when a battery that is short-circuited (0 V battery) internally is connected. When the battery voltage is the 0 V battery charge inhibition battery voltage (V the charging control FET gate is fixed to EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery voltage (V ...
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... VM pin V IOV2 V IOV1 V SS Charger connection Load connection Overcurrent 1 detection delay time (t Mode (1) Remark (1) Normal condition, (2) Overcharge condition, (3) Overdischarge condition, (4) Overcurrent condition The charger is supposed to charge with constant current. 22 Overcharge detection delay time (t ) Overdischarge detection delay time (t CU (1) (2) (1) Figure 7 ) Overcurrent 2 detection delay time (t ...
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... pin pin CHA Charger connection Load connection Mode Remark (1) Normal condition, (2) Overcharge condition, (3) Overdischarge condition, (4) Overcurrent condition The charger is supposed to charge with constant current. 4. Abnormal Charge Current Detection V CU −V V Battery CU HC voltage ...
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... R1 for ESD protection. * capacitor of less than 0.022 µF is connected to C1, DO may oscillate when load short-circuiting is Be sure to connect a capacitor of 0.022 µF or higher to C1. detected. * has a resistance higher than 4 kΩ, the charging current may not be cut when a high-voltage charger is connected VDD 470 Ω ...
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... Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out connection with any infringement by products including this IC of patents owned by a third party. ...
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... BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Characteristics (Typical Data) 1. Detection / Release Voltage Temperature Characteristics Overcharge detection voltage vs. temperature 4.44 4.42 4.40 4.38 4.36 4.34 −50 − [°C] Overdischarge detection voltage vs. temperature 3.04 3.02 3.00 2.98 2.96 2.94 −50 − [°C] Overcurrent 1 detection voltage vs. temperature 0.45 0.40 0.35 0.30 0.25 0.20 0.15 −50 − [°C] Load short-circuiting detection voltage vs.temperature 1 ...
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... Current Consumption Power Voltage Characteristics (Ta=25°C) Current consumption power supply voltage dependency Detection / Release Delay Time Temperature Characteristics Overcharge detection delay time vs. temperature 1.50 1.25 1.00 0.75 0.50 − 50 − [°C] Overdischarge detection delay time vs. temperature 200 180 ...
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... Ta [°C] Load short-circuiting delay time vs. temperature 0.40 0.36 0.32 0.28 0.24 0.20 0.16 −50 − [°C] 5. Delay Time Power-Voltage Characteristics (Ta=25°C) Overcurrent 1 detection delay time vs. power supply voltage dependency 2 Load short-circuiting delay time vs. power supply voltage dependency 0.32 0.28 0.24 0.2 0.16 2.5 3 3.5 ...
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... Rev.1.9 _00 6. CO Pin / DO Pin Output Current Characteristics (Ta = 25°C) CO pin source current characteristics −0.5 −0.4 −0.3 −0.2 −0 pin source current characteristics = 3 −0.5 −0.4 −0.3 −0.2 −0 ...
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... Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc ...