BCR2AS-14A-T13B00 RENESAS [Renesas Technology Corp], BCR2AS-14A-T13B00 Datasheet - Page 2

• Manufacturer Part Number: BCR2AS-14A-T13B00
• Description: Triac Low Power Use Non-Insulated Type Planar Passivation Type
• Manufacturer: RENESAS [Renesas Technology Corp]

BCR2AS-14A
Electrical Characteristics
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger curent
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
Tj = 125C
(di/dt)c = –1.0 A/ms
V
D
= 400 V
3. Case temperature is measured on the T
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Parameter
Note2
Note2
Note4
Test conditions






Symbol
(dv/dt)c
V
R
V
I
V
I
I
I
RGT 
V
V
RGT 
FGT 
RGT 
DRM
th (j-c)
FGT 
RGT 
TM
GD
Min.
0.2
0.5
—
—
—
—
—
—
—
—
—
2
tab.
Typ.
—
—
—
—
—
—
—
—
—
—
—
Commutating voltage and current waveforms
Max.
1.0
2.1
2.0
2.0
2.0
4.0
10
10
10
—
—
Supply Voltage
Main Voltage
Main Current
C/W
V/s
Unit
mA
mA
mA
mA
V
V
V
V
V
(inductive load)
(dv/dt)c
Tj = 125C, V
Tc = 25C, I
instantaneous measurement
Tj = 25C, V
R
Tj = 25C, V
R
Tj = 125C, V
Junction to case
Tj = 125C
G
G
= 330 
= 330 
Test conditions
TM
D
D
(di/dt)c
DRM
D
= 6 V, R
= 6 V, R
= 3A,
= 1/2 V
Note3
applied
Time
Time
Time
V
D
Preliminary
L
L
DRM
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= 6 ,
= 6 ,