STM8S207C6T3B STMICROELECTRONICS [STMicroelectronics], STM8S207C6T3B Datasheet - Page 69

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STM8S207C6T3B

Manufacturer Part Number
STM8S207C6T3B
Description
Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
STM8S207xx, STM8S208xx
10.3.6
Table 37.
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
3. Guaranteed by design.
Symbol
I
I
lkg ana
t
lkg(inj)
V
R
R
V
V
I
lkg
hys
, t
IH
pu
IL
F
Input low level
voltage
Input high level
voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10% - 90%)
Input leakage
current,
analog and digital
Analog input
leakage current
Leakage current in
adjacent I/O
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
Parameter
(1)
(2)
V
V
Fast I/Os
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
Fast I/Os
Load = 20 pF
Standard and high sink I/Os
Load = 20 pF
V
V
Injection current ±4 mA
DD
DD
SS
SS
= 5 V
= 5 V, V
V
V
Conditions
IN
IN
IN
V
V
Doc ID 14733 Rev 12
DD
= V
DD
SS
DD
0.7 x V
and T
Min
-0.3
30
DD
A
unless otherwise specified. All
Typ
700
55
Electrical characteristics
V
0.3 x V
DD
±250
125
125
20
±1
35
Max
+ 0.3 V
80
±1
(3)
(2)
(2)
(3)
(2)
(2)
DD
Unit
mV
µA
nA
µA
ns
V
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