STP40NF10_07 STMICROELECTRONICS [STMicroelectronics], STP40NF10_07 Datasheet - Page 4

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STP40NF10_07

Manufacturer Part Number
STP40NF10_07
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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0
Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 14)
D
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 250 µA, V
V
R
(see Figure 13)
V
R
(see Figure 13)
=Max rating,T
= Max rating
= ±20V
= V
= 10V, I
= 15V
= 25V, f = 1 MHz,
= 0
= 10V
DD
DD
Test conditions
= 80V, I
G
G
Test conditions
= 4.7Ω V
= 4.7Ω, V
Test conditions
GS
= 50V, I
= 27V, I
, I
,
I
D
D
D
D
=28A
= 25A
GS
= 250µA
= 50A,
GS
D
D
GS
= 0
= 25A
= 40A,
C
= 10V
=125°C
= 10V
Min.
Min.
100
Min.
2
2180
Typ.
83.7
57.6
13.3
17.5
298
0.025
22
Typ.
Typ.
3
21
46
54
13
Max.
STP40NF10
0.028
±100
76
Max.
Max.
10
1
4
Unit
Unit
nC
nC
nC
Unit
pF
pF
pF
S
µA
µA
nA
ns
ns
ns
ns
V
V

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